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Name: BLF574XR,112
Brand: Ampleon USA Inc.
SKU: BLF574XR,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Ampleon USA Inc. BLF574XR,112

Part No.:: BLF574XR,112

Manufacturer:: Ampleon USA Inc.

Package:: SOT-1214A

Datasheet:: BLF574XR,112.pdf

Description:: RF FET LDMOS 110V 23DB SOT1214A

In Stock:: 2709

Quantity:: Add To Cart

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BLF574XR,112 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BLF574XR,112 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BLF574XR,112 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BLF574XR,112 Typical application Circuitry

BLF574XR,112

The BLF574XR,112 is a high-power RF LDMOS transistor designed for broadband applications requiring high efficiency and linearity, such as RF power amplifiers. It's commonly used in broadcasting, telecommunications, and industrial RF applications. This transistor is capable of handling high power levels and is optimized for a wide range of frequencies, making it highly versatile for RF applications. Let's explore its application scenarios, specifications, and a detailed example of its integration into a circuit:

BLF574XR,112: Functionality and Application Scenarios

Typical Applications

- Broadcasting Equipment: Utilized in TV and radio broadcasting transmitters for high-power amplification.

- Telecommunications: Suitable for RF power amplification in cellular and wireless communication base stations.

- Industrial RF Applications: Employed in RF heating and plasma generation for industrial processes.

Key Specifications

- LDMOS Technology: Incorporates Laterally Diffused Metal Oxide Semiconductor technology, known for high efficiency in RF power amplification.

- Frequency Range: Capable of operating effectively across a wide range of RF frequencies.

- High Power Handling: Designed to deliver significant RF power output, crucial for demanding RF applications.

Circuit Design: BLF574XR,112 in a Broadcasting Transmitter

1. RF Input Connection

- Gate (Pin 1): Connect the modulated RF input signal, such as audio or video data, to the gate. This pin controls the amplification process.

2. Power Supply Attachment

- Drain (Pin 2): Attach the drain to a high-power RF supply, providing the necessary power for amplification.

3. Output to Antenna System

- Source (Pin 3): Link the source to the broadcasting antenna or transmission system. This pin outputs the amplified RF signal.

4. Biasing Network for Gate

- Gate Bias (Pin 4): Set up an appropriate biasing network for the gate to control the transistor's operation effectively.

Design Considerations

- Reliable Power Supply: Ensure a robust and stable power supply for handling the high-power requirements.

- Effective Cooling Mechanism: Implement cooling solutions to manage the heat generated during high-power RF amplification.

- Optimal Impedance Matching: Achieve impedance matching to maximize power transfer and efficiency.

- Maintaining Signal Integrity: Preserve the quality of the RF signal to avoid distortion or loss.

- EMI and Layout Considerations: Design the PCB to minimize electromagnetic interference and optimize signal path integrity.

- Gate Voltage Control: Precisely manage gate voltage to ensure stable transistor operation and prevent non-linearities.

- Regulatory Compliance: Adhere to industry standards and regulations, particularly important in broadcasting applications.

- Environmental Adaptability: Consider the impact of environmental factors like temperature on the transistor's performance.

Incorporating the BLF574XR,112 into a circuit requires careful consideration of these factors for optimal functionality and performance. For detailed specifications, including pin layout and electrical parameters, always refer to the BLF574XR,112's datasheet and technical documentation.

BLF574XR,112 information

BLF574XR,112 Specifications

Packaging:
Tray
Series:
-
ProductStatus:
Active
TransistorType:
LDMOS (Dual), Common Source
Frequency:
225MHz
Gain:
23.5dB
Voltage-Test:
50 V
CurrentRating(Amps):
-
NoiseFigure:
-
Current-Test:
100 mA
Power-Output:
600W
Voltage-Rated:
110 V

BLF574XR,112 FAQ

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3. Are the BLF574XR,112 price and inventory displayed accurate?

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6. What is the process for return or replacement of BLF574XR,112?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BLF574XR,112 we delivered, we will accept the replacement or return of the BLF574XR,112 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BLF574XR,112.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations