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NXP USA Inc. MRFE6S9060NR1

Part No.:: MRFE6S9060NR1

Manufacturer:: NXP USA Inc.

Package:: TO-270AA

Datasheet:: MRFE6S9060NR1.pdf

Description:: FET RF 66V 880MHZ TO270-2

In Stock:: 2820

Quantity:: Add To Cart

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MRFE6S9060NR1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
TransistorType:
LDMOS
Frequency:
880MHz
Gain:
21.1dB
Voltage-Test:
28 V
CurrentRating(Amps):
-
NoiseFigure:
-
Current-Test:
450 mA
Power-Output:
14W
Voltage-Rated:
66 V

MRFE6S9060NR1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MRFE6S9060NR1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MRFE6S9060NR1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MRFE6S9060NR1 information

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MRFE6S9060NR1 Typical application Circuitry

MRFE6S9060NR1

MRFE6S9060NR1 is an RF-power LDMOS transistor optimized for high-performance amplification. This device is not strictly a "chip" but a transistor designed to operate in environments that demand robust power amplification, particularly at higher frequencies.

Functional Aspects: The MRFE6S9060NR1 is characterized by its capability to amplify RF signals efficiently. It is built with LDMOS technology, which endows it with the capacity to manage significant power outputs without compromising efficiency.

Application Environments: This transistor finds its utility extensively in broadband RF power amplification tasks. It is a common feature in applications like cellular base stations where delivering amplified RF signals over a broad frequency range is a prerequisite.

Technical Attributes: Characterized by a blend of high gain, efficiency, and linearity, MRFE6S9060NR1 is also renowned for its ruggedness, which makes it resilient in various operational conditions.

Scenario: Integration into a Cellular Base Station

1. Connection to Power Supply

- Connection Details: The drain of MRFE6S9060NR1 is connected to the power supply, ensuring it receives the needed voltage to function optimally.

- Significance: Powering the transistor for effective amplification of incoming RF signals.

2. RF Signal Input

- Attachment Point: The RF signal is fed into the transistor through the gate, requiring a connection that facilitates efficient signal transfer.

- Importance: Serving as the entry point for RF signals destined for amplification.

3. Grounding Strategy

- Implementation: The source is grounded to establish a stable operating base for the transistor.

- Rationale: Ensuring operational stability and minimal interference during the amplification process.

4. Output Extraction

- Extraction Point: Amplified signals are extracted from the drain, which should be connected with considerations for impedance matching.

- Purpose: Ensuring efficient transfer of amplified signals to the next stage of the transmission chain.

Considerations in Design

1. Thermal Management

- Implementation Strategy: A heat sink or similar thermal management solutions should be attached to MRFE6S9060NR1.

- Underlying Reason: To dissipate the heat generated during the amplification process, preventing overheating and ensuring consistent performance.

2. Impedance Matching

- Technique: The design should consider the impedance of the source and load to achieve optimal matching.

- Objective: To maximize power transfer and minimize reflections, enhancing overall system efficiency.

The integration of MRFE6S9060NR1 into systems like cellular base stations should be approached with a focus on thermal management and impedance matching. Proper grounding and connection protocols ensure that the device operates within optimal parameters, delivering amplified signals with high efficiency and linearity.

MRFE6S9060NR1 FAQ

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6. What is the process for return or replacement of MRFE6S9060NR1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MRFE6S9060NR1 we delivered, we will accept the replacement or return of the MRFE6S9060NR1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MRFE6S9060NR1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations