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Name: MRFE6S9045NR1
Brand: NXP USA Inc.
SKU: MRFE6S9045NR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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NXP USA Inc. MRFE6S9045NR1

Part No.:: MRFE6S9045NR1

Manufacturer:: NXP USA Inc.

Package:: TO-270AA

Datasheet:: MRFE6S9045NR1.pdf

Description:: FET RF 66V 880MHZ TO-270-2

In Stock:: 3142

Quantity:: Add To Cart

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MRFE6S9045NR1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Obsolete
TransistorType:
LDMOS
Frequency:
880MHz
Gain:
22.1dB
Voltage-Test:
28 V
CurrentRating(Amps):
-
NoiseFigure:
-
Current-Test:
350 mA
Power-Output:
10W
Voltage-Rated:
66 V

MRFE6S9045NR1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MRFE6S9045NR1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MRFE6S9045NR1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MRFE6S9045NR1 information

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MRFE6S9045NR1 Typical application Circuitry

MRFE6S9045NR1

The MRFE6S9045NR1 is an LDMOS transistor, not a chip. It is designed for applications demanding high-power radio frequency (RF) amplification, particularly in the UHF band.

Functionality: The MRFE6S9045NR1 is adept at amplifying RF signals. It is crafted from LDMOS (Lateral Diffusion Metal-Oxide-Semiconductor) technology, enabling it to handle significant power levels efficiently.

Application Scenarios: This LDMOS transistor is especially prominent in UHF broadcast transmitters and industrial, scientific, and medical applications (ISM) where robust RF amplification is essential.

Key Features: MRFE6S9045NR1 boasts of a high gain and efficiency, with an enhanced ruggedness that allows it to withstand demanding operational conditions like high VSWR (Voltage Standing Wave Ratio).

Application Scenario: Integration in a UHF Broadcast Transmitter

1. Source Connection

- Grounding Method: The source pin should be grounded efficiently to provide a stable operating condition.

- Purpose: Ensuring minimal interference and noise which enhances signal amplification.

2. Gate Biasing

- Biasing Technique: Apply an appropriate gate-source bias voltage to control the transistor's operation.

- Objective: Managing the flow of current through the transistor, ensuring alignment with desired amplification levels.

3. RF Input

- Connection: The gate is where the RF input signal is fed into the transistor.

- Aim: This is where amplification initiates; thus, it should be appropriately managed to prevent overdriving.

4. Drain Connection

- Supply Voltage: The drain should be connected to a suitable supply voltage, considering the MRFE6S9045NR1's specifications.

- Goal: Supplying the necessary power to facilitate effective RF amplification.

Design Considerations

1. Heat Management

- Strategy: Incorporate sufficient heat sinking and cooling mechanisms.

- Reason: The MRFE6S9045NR1 requires efficient heat dissipation because it can produce a lot of heat while operating.

2. Protection Circuits

- Incorporation: To prevent overcurrent or voltage, incorporate protection circuits.

- Necessity: Enhancing the lifespan and operational reliability of the MRFE6S9045NR1.

The operational efficiency of MRFE6S9045NR1 is hinged on meticulous design and implementation, considering its heat dissipation needs, ensuring appropriate biasing, and utilizing protection circuits. Adherence to these guidelines accentuates its capabilities in diverse high-power RF amplification tasks.

MRFE6S9045NR1 FAQ

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3. Are the MRFE6S9045NR1 price and inventory displayed accurate?

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6. What is the process for return or replacement of MRFE6S9045NR1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MRFE6S9045NR1 we delivered, we will accept the replacement or return of the MRFE6S9045NR1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MRFE6S9045NR1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations