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Name: BLF6G21-10G,112
Brand: Ampleon USA Inc.
SKU: BLF6G21-10G,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Ampleon USA Inc. BLF6G21-10G,112

Part No.:: BLF6G21-10G,112

Manufacturer:: Ampleon USA Inc.

Package:: SOT-538A

Datasheet:: BLF6G21-10G,112.pdf

Description:: RF FET LDMOS 65V 18.5DB SOT538A

In Stock:: 2032

Quantity:: Add To Cart

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BLF6G21-10G,112 Specifications

Packaging:
Tray
Series:
-
ProductStatus:
Obsolete
TransistorType:
LDMOS
Frequency:
2.11GHz ~ 2.17GHz
Gain:
18.5dB
Voltage-Test:
28 V
CurrentRating(Amps):
-
NoiseFigure:
-
Current-Test:
100 mA
Power-Output:
700mW
Voltage-Rated:
65 V

BLF6G21-10G,112 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BLF6G21-10G,112 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BLF6G21-10G,112 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BLF6G21-10G,112 information

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BLF6G21-10G,112 Typical application Circuitry

The BLF6G21-10G,112 is a part of the advanced RF power LDMOS transistor series, designed for broadband applications that require high power and efficiency. This series is specifically tailored to meet the demands of applications such as broadcast transmitters, cellular and wireless communications, and RF heating, where consistent performance across a wide frequency range is essential.

1. Series Attributes: The RF power LDMOS transistors, including the BLF6G21-10G,112, are celebrated for their ability to deliver high power output with high efficiency and linearity over a broad spectrum of frequencies. These devices are engineered to provide reliable RF power amplification in challenging environments.

2. Pin Configuration: The BLF6G21-10G,112 is commonly housed in an SOT-1121A package, featuring essential terminals for RF power amplification. These include the Gate (G) terminal for the RF input signal, the Drain (D) terminal for the RF output signal, and the Source (S) terminal, which is typically connected to the ground. The package may also include additional leads or tabs for mechanical stability and enhanced thermal dissipation.

3. Circuit Integration Method: In integrating the BLF6G21-10G,112 into an RF power amplifier circuit, the Gate terminal is connected to the RF drive signal, often through an impedance matching network to ensure optimal power transfer and input impedance matching. The Drain terminal is connected to the RF load, such as an antenna or further amplification stages, also via a matching network to optimize output impedance and efficiency. The Source terminal is generally grounded, serving as the return path for the currents.

4. System Connections: Key considerations for system integration include implementing biasing circuits to properly bias the Gate for optimal linearity and performance. Due to the high power levels managed by the device, a robust heat sink or other cooling solutions are necessary to dissipate the generated heat effectively. Adequate RF grounding and the use of shielding techniques are also crucial to minimize parasitic effects and ensure stable operation.

5. Incorporating Protective Features: Although the BLF6G21-10G,112 is designed to be rugged and capable of withstanding harsh conditions, adding external protective features such as RF isolators, circulators, or protection circuits for handling high Voltage Standing Wave Ratio (VSWR) conditions can further safeguard the device from damaging reflections and operational stress.

6. Communication and Configuration: The BLF6G21-10G,112 typically does not include direct communication interfaces. However, the design of the RF path, bias networks, and matching circuits requires careful consideration and optimization to achieve the desired amplifier performance. This process may involve RF simulation and empirical tuning to ensure the amplifier meets the required specifications.

Utilizing the BLF6G21-10G,112 in RF power amplifier designs offers a powerful solution capable of delivering high RF power with efficiency and linearity across a wide frequency range. Its sophisticated LDMOS technology makes it an essential component for developing high-performance RF systems in various demanding applications.

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6. What is the process for return or replacement of BLF6G21-10G,112?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BLF6G21-10G,112 we delivered, we will accept the replacement or return of the BLF6G21-10G,112 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BLF6G21-10G,112.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations