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Name: BLF245B,112
Brand: Ampleon USA Inc.
SKU: BLF245B,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Ampleon USA Inc. BLF245B,112

Part No.:: BLF245B,112

Manufacturer:: Ampleon USA Inc.

Package:: SOT-279A

Datasheet:: BLF245B,112.pdf

Description:: RF FET 2 NC 65V 18DB SOT279A

In Stock:: 2477

Quantity:: Add To Cart

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BLF245B,112 Specifications

Packaging:
Tray
Series:
-
ProductStatus:
Obsolete
TransistorType:
2 N-Channel (Dual) Common Source
Frequency:
175MHz
Gain:
18dB
Voltage-Test:
28 V
CurrentRating(Amps):
4.5A
NoiseFigure:
-
Current-Test:
25 mA
Power-Output:
30W
Voltage-Rated:
65 V

BLF245B,112 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BLF245B,112 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BLF245B,112 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BLF245B,112 information

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BLF245B,112 Typical application Circuitry

BLF245B,112

The BLF245B,112 is a power MOSFET designed for RF (Radio Frequency) applications. It is a silicon N-channel enhancement-mode vertical D-MOS transistor primarily used for broadband amplification. This MOSFET is widely recognized for its high power and efficiency, making it suitable for RF power amplifiers, particularly in VHF (Very High Frequency) and UHF (Ultra High Frequency) bands. Let's explore its application scenarios, specifications, and an example circuit design:

BLF245B,112: Functional Overview and Applications

Key Application Scenarios

- RF Power Amplifiers: Commonly used in VHF and UHF band amplifiers for applications like broadcast transmitters, communication systems, and RF heating.

- Broadband RF Amplification: Suitable for broadband RF applications requiring high power output.

Key Specifications

- Enhancement-mode MOSFET: Designed as an N-channel enhancement-mode device, offering high power and efficiency.

- Frequency Range: Capable of operating effectively in VHF and UHF frequency ranges.

- Power Output: Delivers high power output, making it suitable for demanding RF applications.

Circuit Design: BLF245B,112 in a UHF Amplifier

1. RF Signal Input

- Gate Input (Pin 1): Connect the UHF signal source to the gate. This pin controls the transistor's operation and starts the amplification process.

2. Power Supply Connection

- Drain Supply (Pin 2): Attach the drain to the positive terminal of a suitable RF power supply. This connection is crucial for the output stage of the amplification process.

3. Signal Output and Load Connection

- Source Output (Pin 3): Connect the source to the RF load, such as an antenna or a subsequent RF stage.

4. Biasing and Control

- Gate Biasing (Pin 4): Establish appropriate gate biasing for optimal transistor operation. This might involve a bias network or control circuitry to manage the gate voltage.

Design Considerations

- Stable Power Supply: Ensuring a stable and clean power supply to avoid damaging the transistor and ensure consistent performance.

- Heat Management: Implementing cooling solutions, as high-power RF applications can generate significant heat.

- Impedance Matching: Making sure that the input and output impedances are in line with one another in order to reduce reflections and increase power transfer.

-Signal Integrity: Preserving signal integrity, particularly in high-frequency radio frequency applications, to prevent distortion.

- PCB Layout and Shielding: To reduce electromagnetic interference and preserve signal quality, careful PCB layout and shielding are required.

- Gate Voltage Control: Precise control of the gate voltage to prevent overdrive and ensure linear operation.

- Regulatory Compliance: Ensuring the design complies with relevant RF communication standards and regulations.

When integrating the BLF245B,112 into a circuit, these factors are critical to achieving optimal functionality and performance. For detailed specifications, including pin layout and electrical parameters, always refer to the BLF245B,112's datasheet and technical documentation.

BLF245B,112 FAQ

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6. What is the process for return or replacement of BLF245B,112?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BLF245B,112 we delivered, we will accept the replacement or return of the BLF245B,112 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BLF245B,112.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations