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Name: BF998WR,115
Brand: NXP USA Inc.
SKU: BF998WR,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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NXP USA Inc. BF998WR,115

Part No.:: BF998WR,115

Manufacturer:: NXP USA Inc.

Package:: SC-82A, SOT-343

Datasheet:: BF998WR,115.pdf

Description:: MOSFET N-CH 12V 30MA SOT343R

In Stock:: 2253

Quantity:: Add To Cart

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BF998WR,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Obsolete
TransistorType:
N-Channel Dual Gate
Frequency:
200MHz
Gain:
-
Voltage-Test:
8 V
CurrentRating(Amps):
30mA
NoiseFigure:
0.6dB
Current-Test:
10 mA
Power-Output:
-
Voltage-Rated:
12 V

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BF998WR,115 information

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BF998WR,115 Typical application Circuitry

BF998WR,115

The BF998WR,115 is a dual-gate MOSFET transistor designed for high-frequency applications, such as RF amplifiers, mixers, and oscillators, particularly in the VHF (Very High Frequency) and UHF (Ultra High Frequency) bands. Its dual-gate structure provides enhanced control and performance in RF circuits.

Key Applications:

1. RF Amplifiers: Used in amplifiers for VHF and UHF radio frequencies to provide signal gain and strength.

2. RF Mixers: Employed in mixers for frequency conversion in communication systems.

3. Oscillators: Utilized in oscillators to generate stable RF frequencies in various wireless applications.

Parameter Features:

- Frequency Range: Suitable for high-frequency applications in the VHF and UHF bands.

- Dual-Gate Structure: Offers better control over the gain and frequency response of the device.

- Low Noise Figure: Provides a low noise figure, making it ideal for sensitive RF applications.

Example Circuit - UHF RF Amplifier:

1. Gate 1 Biasing: Connect a biasing resistor and a DC blocking capacitor to Gate 1 (G1) of the BF998WR,115 to set the operating point.

2. Input Matching: Attach an input matching network to Gate 2 (G2) to optimize the impedance for the input RF signal.

3. Output Connection: Link the Drain (D) to an output matching network that connects to the load or the next stage of the circuit.

4. Source Grounding: Connect the BF998WR,115 Source (S) directly to the ground for stable operation.

Design Considerations:

- Biasing: Ensure proper biasing of both gates to achieve the desired operating point and gain without causing instability.

- Impedance Matching: Design input and output matching networks carefully to achieve maximum power transfer and optimal performance.

- Thermal Management: Consider the BF998WR,115 thermal aspects of the device, as high-frequency operation can generate heat that needs to be dissipated effectively.

- Signal Isolation: Use DC blocking capacitors to isolate the RF signal from the DC biasing voltages and to prevent any DC leakage.

In summary, the BF998WR,115 is a versatile dual-gate MOSFET, ideal for high-frequency RF applications like UHF amplifiers and mixers. When designing circuits with this device, it's essential to focus on proper biasing, impedance matching, thermal management, and signal isolation to ensure optimal performance and reliability in applications such as UHF RF amplifiers.

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6. What is the process for return or replacement of BF998WR,115?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BF998WR,115 we delivered, we will accept the replacement or return of the BF998WR,115 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BF998WR,115.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations