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Name: BF998,235
Brand: NXP USA Inc.
SKU: BF998,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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NXP USA Inc. BF998,235

Part No.:: BF998,235

Manufacturer:: NXP USA Inc.

Package:: TO-253-4, TO-253AA

Datasheet:: BF998,235.pdf

Description:: MOSFET N-CH 12V 30MA SOT143

In Stock:: 3160

Quantity:: Add To Cart

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BF998,235 Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Obsolete
TransistorType:
N-Channel Dual Gate
Frequency:
200MHz
Gain:
-
Voltage-Test:
8 V
CurrentRating(Amps):
30mA
NoiseFigure:
0.6dB
Current-Test:
10 mA
Power-Output:
-
Voltage-Rated:
12 V

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BF998,235 information

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BF998,235 Typical application Circuitry

BF998,235

The BF998,235 is a dual-gate MOSFET transistor designed for use in high-frequency applications, such as RF amplifiers, mixers, and oscillators, particularly in the VHF and UHF bands. Its dual-gate structure provides enhanced control and performance in RF circuits.

Key Applications of the BF998,235:

1. RF Amplifiers: Utilized in amplifiers for VHF and UHF radio frequencies to provide signal gain and strength.

2. RF Mixers: Employed in mixers for frequency conversion in communication systems.

3. Oscillators: Used in oscillators to generate stable RF frequencies in various wireless applications.

Parameter Features:

- Frequency Range: Optimized for high-frequency operation, suitable for VHF and UHF applications.

- Dual-Gate Structure: Offers superior control over the gain and linearity of the device.

- Low Noise Figure: Ideal for applications where low noise is essential, such as in sensitive receivers.

Example Circuit - VHF RF Mixer:

1. RF Input Connection: Connect the RF input signal to Gate 1 (G1) of the BF998,235 through a coupling capacitor to isolate the DC biasing.

2. Local Oscillator Input: Attach the local oscillator (LO) signal to Gate 2 (G2) to mix with the RF signal.

3. Output Connection: Link the Drain (D) to an output matching network that connects to the subsequent stage or load.

4. Source Grounding: Ground the Source (S) to provide a stable reference for the device operation.

Design Considerations of the BF998,235:

- Biasing: Accurately bias both gates to achieve the desired mixing or amplification without causing instability or distortion.

- Impedance Matching: Design the input and output matching networks to ensure efficient power transfer and optimal mixer performance.

- Thermal Management: Address the thermal aspects of the device, as high-frequency operation can lead to increased heat generation.

- Isolation: Use DC blocking capacitors and inductors to isolate the RF and LO signals from the DC biasing and to prevent unwanted interactions between the signals.

In summary, the BF998,235 is a versatile dual-gate MOSFET transistor, ideal for high-frequency RF applications such as VHF/UHF mixers and amplifiers. When designing circuits with this device, it's essential to focus on accurate biasing, impedance matching, thermal management, and isolation to ensure optimal performance and reliability in applications like VHF RF mixers.

BF998,235 FAQ

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3. Are the BF998,235 price and inventory displayed accurate?

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6. What is the process for return or replacement of BF998,235?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BF998,235 we delivered, we will accept the replacement or return of the BF998,235 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BF998,235.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations