HMC8413LP2FETR

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Analog Devices Inc. HMC8413LP2FETR

HIGH-RELIABILITY-COMPONENTS
Part No.:
HMC8413LP2FETR
Manufacturer:
Analog Devices Inc.
Package:
6-VDFN Exposed Pad, CSP
Datasheet:
HMC8413LP2FETR.pdf
Description:
HIGH LINEARITY DC - 8GHZ LNA
In Stock:
2664
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    HMC8413LP2FETR this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including HMC8413LP2FETR price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for HMC8413LP2FETR to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    HMC8413LP2FETR informationHMC8413LP2FETR information

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    HMC8413LP2FETR Typical application Circuitry

    HMC8413LP2FETR

    The HMC8413LP2FETR is a high-performance low noise amplifier (LNA) chip designed for excellent noise figures and high gain in RF and microwave applications. This chip is renowned for its outstanding linearity, wide dynamic range, and low power consumption.

    Applications: The HMC8413LP2FETR is widely used in communication systems, radar systems, satellite communications, and test equipment where low noise amplification is crucial. It is particularly suited for applications requiring high sensitivity and wide bandwidth, such as in receiver front-ends and signal processing systems.

    Parameters: This LNA operates over a frequency range of 0.01 GHz to 10 GHz and offers a gain of 17 dB with a noise figure of 0.7 dB. It features a high output IP3 (Third-Order Intercept Point) for excellent linearity and is optimized for low power consumption.

    Circuit Design for a Satellite Communication System Application:

    1. Signal Path: Implement the HMC8413LP2FETR in the front end of the satellite communication receiver to provide low noise amplification. Connect the RF input signal to pin 3 (RF IN) and the RF output to pin 5 (RF OUT).

    2. Power Supply: Provide a stable +5V supply to pin 2 (Vdd) and ground pin 4 (GND) for proper operation. Use bypass capacitors close to the supply pins to filter out noise.

    3. Input/Output Matching: Design proper impedance matching networks at the input and output ports (pins 3 and 5, respectively) to ensure maximum power transfer and minimize reflections.

    4. Biasing: Apply a bias voltage to pin 2 (Vdd) to set the operating point of the amplifier. This voltage should be adjusted according to the desired linearity and power consumption.

    5. Decoupling: Place decoupling capacitors near the power supply pin (pin 2) to minimize the effects of power supply noise on the amplifier's performance.

    6. Thermal Management: Ensure adequate heat sinking for the HMC8413LP2FETR to dissipate heat generated during operation and maintain stable performance.

    Design Considerations: When designing a circuit with the HMC8413LP2FETR, it is crucial to consider the impedance matching for optimal performance, the power supply stability to ensure consistent operation, and the biasing for proper amplifier functionality. Additionally, thermal management should be carefully planned to prevent overheating.

    By integrating the HMC8413LP2FETR into your satellite communication system design, you can achieve low noise amplification with high linearity and wide bandwidth, enhancing the overall sensitivity and performance of the receiver system.

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    6. What is the process for return or replacement of HMC8413LP2FETR?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HMC8413LP2FETR we delivered, we will accept the replacement or return of the HMC8413LP2FETR only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of HMC8413LP2FETR.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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