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Name: BLT50,115
Brand: NXP USA Inc.
SKU: BLT50,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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NXP USA Inc. BLT50,115

Part No.:: BLT50,115

Manufacturer:: NXP USA Inc.

Package:: TO-261-4, TO-261AA

Datasheet:

Description:: RF TRANS NPN 10V 470MHZ SOT223

In Stock:: 2050

Quantity:: Add To Cart

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BLT50,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Obsolete
TransistorType:
NPN
Voltage-CollectorEmitterBreakdown(Max):
10V
Frequency-Transition:
470MHz
NoiseFigure(dBTyp@f):
-
Gain:
-
Power-Max:
2W
DCCurrentGain(hFE)(Min)@IcVce:
25 @ 300mA, 5V
Current-Collector(Ic)(Max):
500mA
OperatingTemperature:
175°C (TJ)
MountingType:
Surface Mount

BLT50,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BLT50,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BLT50,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BLT50,115 information

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BLT50,115 Typical application Circuitry

BLT50,115

The BLT50,115 is a bipolar NPN RF transistor designed primarily for use in high-frequency applications. It is particularly suited for applications requiring low-power RF signal amplification, such as in radio communication, portable devices, and various RF circuits. The BLT50,115 is known for its efficiency in signal amplification at high frequencies, making it a versatile component in RF electronics. Let's explore its application in a portable radio communication device, key specifications, and a detailed example of a circuit design:

BLT50,115: Functional Attributes and Application Scenarios

Ideal Applications

- Portable Radio Communication: Used in handheld radio devices for efficient RF signal amplification.

- RF Signal Processing: Suitable for various RF signal processing applications in communication systems.

- Wireless Devices: Employed in wireless devices requiring small, efficient signal amplifiers.

Key Specifications

- Bipolar NPN Configuration: A standard NPN transistor configuration, ideal for RF amplification.

- High-Frequency Operation: Optimized for high-frequency applications, enhancing signal strength.

- Low Power Consumption: Designed to operate efficiently with minimal power requirements.

Circuit Integration: BLT50,115 in a Portable Radio

1. RF Signal Input

- Base (Pin 1): Connect the RF input signal (e.g., from an antenna or receiver circuit) to the base. This pin serves as the primary input for signal amplification.

2. Power Supply Connection

- Collector (Pin 2): Attach this pin to the positive terminal of a suitable power supply, adhering to the transistor's voltage requirements.

3. Signal Output

- Emitter (Pin 3): Connect the emitter to the next stage of the radio circuit (e.g., a filter or mixer). This pin outputs the amplified signal.

4. Biasing and Control

- Base Biasing (Additional Circuitry): Implement appropriate biasing for the base to control the transistor's operation effectively.

Design Considerations

- Stable Power Source: Ensure a consistent power supply for reliable transistor operation.

- Impedance Matching: Match the input and output impedance for optimal signal transfer and minimal reflection.

- Thermal Management: Although the BLT50,115 typically has low heat dissipation, consider thermal aspects in the overall design.

- Signal Path Integrity: Preserve signal integrity, particularly in high-frequency applications, to avoid degradation.

- PCB Layout and Shielding: Design the PCB layout to minimize electromagnetic interference and optimize signal path integrity.

- Biasing Accuracy: Precise biasing of the base to ensure stable and linear operation of the transistor.

- Regulatory Compliance: Ensure the design complies with regulations for radio communication devices.

- Environmental Factors: Consider the operating environment, as temperature and humidity can affect the transistor's performance.

Incorporating the BLT50,115 into a circuit requires careful consideration of these aspects to achieve optimal functionality. For detailed specifications, including pin layout and electrical parameters, always refer to the BLT50,115's datasheet and technical documentation.

BLT50,115 FAQ

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6. What is the process for return or replacement of BLT50,115?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BLT50,115 we delivered, we will accept the replacement or return of the BLT50,115 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BLT50,115.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations