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Name: BFG35,115
Brand: NXP USA Inc.
SKU: BFG35,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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NXP USA Inc. BFG35,115

Part No.:: BFG35,115

Manufacturer:: NXP USA Inc.

Package:: TO-261-4, TO-261AA

Datasheet:: BFG35,115.pdf

Description:: RF TRANS NPN 18V 4GHZ SOT223

In Stock:: 3678

Quantity:: Add To Cart

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BFG35,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BFG35,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BFG35,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BFG35,115 Typical application Circuitry

The BFG35,115 is a high-performance silicon NPN bipolar transistor tailored for broadband applications, specifically in RF amplification. Manufactured by NXP Semiconductors, this device excels in circuits requiring high-speed switching and efficient signal amplification across a wide frequency range.

Key Features and Specifications:

- High Frequency Performance: Optimized for high-frequency operations, making it ideal for broadband RF applications.

- Power Capability: Can handle collector-emitter voltages up to 12 V and collector currents up to 100 mA, accommodating a range of operational intensities.

- Enhanced Gain: Provides a significant forward current transfer ratio (hFE), facilitating effective signal amplification.

- Low Noise Figure: Ensures minimal signal distortion, crucial for applications where clarity and accuracy are paramount.

- Packaging: Encased in an SOT-223 package, which aids in effective heat dissipation and supports compact design layouts.

Application Scenario: Broadband RF Power Amplifier in Communication Systems

In this scenario, the BFG35,115 is used to amplify RF signals in a broadband communication system, ensuring strong and clear transmission over various frequencies.

Circuit Design Methodology:

1. Stable Power Supply Setup:

- Voltage Regulation: Implement a regulated power supply to provide a stable 12 V to the collector of the BFG35,115. Use a low-dropout (LDO) regulator for consistent performance.

- Biasing Network: Design a biasing network with resistors to set the base voltage, stabilizing the transistor's operating point for linear amplification.

2. Input Signal Integration:

- DC Block: Connect a high-pass filter at the input to block DC components from the source signal, protecting the transistor and ensuring only AC components are amplified.

- Impedance Matching: Use an impedance matching network to match the antenna or preceding stage to the input impedance of the BFG35,115, optimizing power transfer and minimizing reflections.

3. Amplification Configuration:

- Emitter Feedback: Include a resistor in the emitter circuit to provide negative feedback, which stabilizes the gain and improves linearity.

- Collector Load: Place a load resistor at the collector to convert the amplified current into a voltage suitable for further processing.

4. Output Adjustment and Delivery:

- Impedance Matching at Output: Design the output stage with an impedance matching network to ensure optimal power delivery to the subsequent stage, such as another amplifier or a transmission line.

- Signal Conditioning: Incorporate a low-pass filter at the output to eliminate any unwanted high-frequency noise or harmonics, refining the signal quality.

5. Testing and Performance Optimization:

- Network Analysis: Conduct thorough testing with a network analyzer to measure the amplifier's gain, bandwidth, and efficiency across its operational frequency range.

- Heat Management: Monitor the thermal profile of the BFG35,115 during extended operation. If necessary, add a heatsink or cooling mechanism to dissipate excess heat effectively.

Design Considerations:

- Component Quality: Select high-quality, reliable passive components for the biasing and feedback networks to ensure stable long-term operation.

- PCB Layout Practices: Arrange the circuit layout to minimize the path lengths of high-frequency signals, reducing potential losses and cross-talk. Utilize ground planes and shielding to enhance EMC performance.

- Reliability Under Stress: Account for environmental and operational stress by choosing components rated for the expected temperature range and mechanical stresses.

- Future-proofing the Design: Consider the possibility of frequency band adjustments or technology scaling by designing the circuit with flexibility for component swaps or adjustments.

Utilizing the BFG35,115 in a broadband RF power amplifier showcases its capabilities in enhancing signal strength and integrity in communication systems, critical for maintaining high-quality and reliable communication links. This setup exemplifies how the BFG35,115 can be effectively incorporated into advanced RF amplification tasks, driving enhanced performance in high-demand applications.

BFG35,115 information

BFG35,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Obsolete
TransistorType:
NPN
Voltage-CollectorEmitterBreakdown(Max):
18V
Frequency-Transition:
4GHz
NoiseFigure(dBTyp@f):
-
Gain:
-
Power-Max:
1W
DCCurrentGain(hFE)(Min)@IcVce:
25 @ 100mA, 10V
Current-Collector(Ic)(Max):
150mA
OperatingTemperature:
175°C (TJ)
MountingType:
Surface Mount

BFG35,115 FAQ

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3. Are the BFG35,115 price and inventory displayed accurate?

The price and inventory of BFG35,115 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of BFG35,115?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BFG35,115 we delivered, we will accept the replacement or return of the BFG35,115 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BFG35,115.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations