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Name: BFG591,115
Brand: NXP USA Inc.
SKU: BFG591,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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NXP USA Inc. BFG591,115

Part No.:: BFG591,115

Manufacturer:: NXP USA Inc.

Package:: TO-261-4, TO-261AA

Datasheet:: BFG591,115.pdf

Description:: RF TRANS NPN 15V 7GHZ SOT223

In Stock:: 2361

Quantity:: Add To Cart

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BFG591,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Obsolete
TransistorType:
NPN
Voltage-CollectorEmitterBreakdown(Max):
15V
Frequency-Transition:
7GHz
NoiseFigure(dBTyp@f):
-
Gain:
-
Power-Max:
2W
DCCurrentGain(hFE)(Min)@IcVce:
60 @ 70mA, 8V
Current-Collector(Ic)(Max):
200mA
OperatingTemperature:
150°C (TJ)
MountingType:
Surface Mount

BFG591,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BFG591,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BFG591,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BFG591,115 information

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BFG591,115 Typical application Circuitry

The BFG591,115 is a high-performance NPN bipolar junction transistor (BJT) from the RF transistor series, designed for a wide range of high-frequency applications. This component is particularly noted for its excellent gain bandwidth product and low noise figure, making it an ideal choice for applications in RF amplification, oscillators, and mixers in telecommunications, satellite communications, and professional RF equipment where signal integrity and amplification efficiency are critical.

1. Series Attributes: The RF transistor series, including the BFG591,115, is renowned for its ability to provide high-frequency amplification with high efficiency and reliability. These transistors are engineered to operate at GHz frequencies, offering low noise figures and high gain for optimal RF performance.

2. Pin Configuration: The BFG591,115 is commonly available in an SOT-223 package, featuring three terminals essential for its operation. These include the Collector (C) terminal, which is typically connected to the voltage supply; the Base (B) terminal, where the RF input signal is applied; and the Emitter (E) terminal, which is connected to the ground. The package may also include a tab or lead that is internally connected to the Collector for enhanced heat dissipation.

3. Circuit Integration Approach: In integrating the BFG591,115 into an RF circuit, the Base terminal is connected to the RF input, often through a biasing network or matching circuit to optimize the input impedance and signal coupling. The Collector terminal is connected to the power supply through an RF choke or biasing network to provide the necessary DC bias while isolating the DC from the RF output. The Emitter terminal is grounded, serving as the return path for the signal and bias currents.

4. System Connections: Additional considerations for system integration may include the implementation of input and output matching networks to maximize power transfer and minimize reflections. The use of decoupling capacitors on the Collector supply line is also common to suppress high-frequency noise and stabilize the DC supply.

5. Incorporating Protective Features: While the BFG591,115 is designed to be robust, incorporating external protective features such as biasing resistors to stabilize the operating point and transient voltage suppressors to protect against ESD can further enhance the circuit's reliability and longevity.

6. Communication and Configuration: The BFG591,115 does not typically feature direct communication or configuration interfaces. However, the design and optimization of the biasing networks, matching circuits, and thermal management solutions are crucial for achieving the desired performance and reliability in the specific RF application.

Employing the BFG591,115 in RF designs offers a powerful solution for achieving high-quality signal amplification in high-frequency applications. Its advanced performance characteristics make it a key component in the development of sophisticated RF systems where efficiency, linearity, and signal integrity are paramount.

BFG591,115 FAQ

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3. Are the BFG591,115 price and inventory displayed accurate?

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6. What is the process for return or replacement of BFG591,115?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BFG591,115 we delivered, we will accept the replacement or return of the BFG591,115 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BFG591,115.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations