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Name: NGTB75N65FL2WG
Brand: ON Semiconductor
SKU: NGTB75N65FL2WG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor NGTB75N65FL2WG

Part No.:: NGTB75N65FL2WG

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:: NGTB75N65FL2WG.pdf

Description:: IGBT TRENCH/FS 650V 100A TO247

In Stock:: 2661

Quantity:: Add To Cart

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NGTB75N65FL2WG Specifications

Packaging:
Bulk,Tube
Series:
-
ProductStatus:
Active
IGBTType:
Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max):
650 V
Current-Collector(Ic)(Max):
100 A
Current-CollectorPulsed(Icm):
200 A
Vce(on)(Max)@VgeIc:
2V @ 15V, 75A
Power-Max:
595 W
SwitchingEnergy:
1.5mJ (on), 1mJ (off)
InputType:
Standard
GateCharge:
310 nC
Td(on/off)@25°C:
110ns/270ns
TestCondition:
400V, 75A, 10Ohm, 15V
ReverseRecoveryTime(trr):
80 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

NGTB75N65FL2WG this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NGTB75N65FL2WG price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NGTB75N65FL2WG to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NGTB75N65FL2WG information

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NGTB75N65FL2WG Typical application Circuitry

The NGTB75N65FL2WG is a part of the NGTB series developed by ON Semiconductor, specifically designed as a high-performance IGBT (Insulated Gate Bipolar Transistor). This IGBT is tailored for power switching applications, particularly in areas like motor drives, power inverters, and converters. The NGTB75N65FL2WG is notable for its high efficiency and fast switching capabilities, making it well-suited for high-power and high-frequency applications.

1. Operational Characteristics and Electrical Specifications: The NGTB75N65FL2WG operates with a collector-emitter voltage typically around 650V, supporting a collector current up to 75A. This high-voltage and high-current capability is essential for handling large power loads efficiently. The device also features a low on-state voltage drop, which contributes to its high efficiency, and a fast switching speed, which is crucial for minimizing losses in high-frequency switching applications.

2. Pin Configuration and Connection Approach: The NGTB75N65FL2WG comes in a standard IGBT package with three primary terminals: the Gate (G), Collector (C), and Emitter (E). The Gate terminal is the control input, which modulates the conductivity between the Collector and Emitter. The Collector terminal is typically connected to the power supply, while the Emitter terminal is connected to the load. Accurate connection of these terminals is critical for the IGBT's proper functionality and efficient power handling.

3. Integration into Electronic Circuits: In applications such as motor drives or inverters, the NGTB75N65FL2WG is used as a switch to control power flow. The device's Gate terminal is connected to a driving circuit, which provides the necessary gate voltage to switch the IGBT on or off. The Collector and Emitter terminals are integrated into the power circuit, where the IGBT switches the high voltage and current loads. Proper gate drive circuitry is crucial to ensure that the IGBT operates efficiently and to prevent malfunction.

4. Applications and Performance Flexibility: The NGTB75N65FL2WG is a versatile component suitable for a wide range of high-power applications. Its fast switching capability and efficiency make it ideal for applications like renewable energy inverters, high-power motor controllers, and power supply units where efficiency and reliability are paramount.

5. Circuit Design and Implementation Considerations: Designing circuits with the NGTB75N65FL2WG requires careful consideration of the gate drive requirements, including the gate voltage and current. The circuit layout should be optimized for minimal stray inductance to enhance switching performance. Additionally, thermal management is critical due to the heat generated during high-power operation. Adequate heat sinking and possibly active cooling methods may be necessary to maintain the IGBT's temperature within safe operating limits.

6. Compliance with Industry Standards: The NGTB75N65FL2WG adheres to industry standards for IGBTs, ensuring reliable performance in demanding applications.

7. Handling and Installation Protocols: The NGTB75N65FL2WG, like other semiconductor devices, is sensitive to electrostatic discharge (ESD) and thermal stress. Proper ESD precautions and handling procedures are essential during installation to prevent damage to the device.

In conclusion, the NGTB75N65FL2WG from ON Semiconductor's NGTB series is a high-efficiency IGBT designed for high-power and high-frequency applications. Its effective use involves understanding its operational characteristics, ensuring accurate pin connections, strategic circuit integration, leveraging its application versatility, careful circuit design for thermal management and gate driving, adherence to industry standards, and cautious handling and installation. These practices ensure that the NGTB75N65FL2WG functions effectively, contributing to the performance and reliability of power switching systems.

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6. What is the process for return or replacement of NGTB75N65FL2WG?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NGTB75N65FL2WG.

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