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Name: FGA40N65SMD
Brand: ON Semiconductor
SKU: FGA40N65SMD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FGA40N65SMD

Part No.:: FGA40N65SMD

Manufacturer:: ON Semiconductor

Package:: TO-3P-3, SC-65-3

Datasheet:: FGA40N65SMD.pdf

Description:: IGBT FIELD STOP 650V 80A TO3PN

In Stock:: 302

Quantity:: Add To Cart

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FGA40N65SMD Typical application Circuitry

The FGA40N65SMD is a high-performance IGBT (Insulated Gate Bipolar Transistor) from the Field Stop IGBT series, designed for applications that require high efficiency, fast switching, and robustness in handling high voltages and currents. This IGBT is particularly suited for power conversion systems such as inverters, UPS (Uninterruptible Power Supplies), and motor drives where energy efficiency and reliability are paramount. The FGA40N65SMD incorporates advanced Field Stop technology, which enhances its switching performance and reduces energy losses during operation.

1. Innovative Aspects of the FGA40N65SMD Series: The FGA40N65SMD stands out for its integration of Field Stop technology, which minimizes the saturation voltage and switching losses, significantly improving efficiency in high-power applications. With a 650V voltage rating and 40A current capability, this IGBT is engineered to deliver superior performance in demanding environments.

2. Pin Configuration and Connection Details: The FGA40N65SMD is typically encapsulated in a TO-247 package, which includes three pins. Pin 1 is the Collector (C), connected to the high voltage supply and the load. Pin 2 is the Gate (G), which receives the driving signal to control the IGBT's switching operation. Pin 3 is the Emitter (E), which is connected to the ground or the negative side of the power supply. The Gate pin must be driven with an appropriate gate resistor to control the switching speed and to protect the gate from excessive voltage.

3. Circuit Integration Techniques for the FGA40N65SMD: Integrating the FGA40N65SMD into a circuit involves connecting the Collector to the load and the power supply, ensuring proper insulation and thermal management due to the high voltages involved. The Gate requires a driving circuit, typically involving a gate driver IC to provide the necessary voltage levels and protection features such as under-voltage lockout. The Emitter should be securely connected to the ground or the negative terminal of the power supply, with attention to minimizing the loop area to reduce electromagnetic interference.

4. Maximizing Performance with the FGA40N65SMD: To fully leverage the capabilities of the FGA40N65SMD, it is crucial to optimize the gate drive circuitry to ensure fast and efficient switching. The use of snubber circuits may be necessary to protect against voltage spikes and to reduce switching noise. Adequate heat sinking is also essential to dissipate heat generated during operation, ensuring the IGBT operates within its thermal limits.

5. Design Considerations for Implementing the FGA40N65SMD: When designing circuits with the FGA40N65SMD, engineers must consider the device's electrical characteristics, such as the maximum voltage and current ratings, switching speeds, and thermal resistance. Layout considerations, such as minimizing trace lengths and employing proper decoupling techniques, are crucial to enhance performance and reliability.

6. Applications Benefiting from the FGA40N65SMD: The high efficiency and fast switching characteristics of the FGA40N65SMD make it an ideal choice for a wide range of high-power applications, including solar inverters, electric vehicle charging stations, and high-performance motor drives, where energy efficiency and reliability are critical.

In summary, the FGA40N65SMD from the Field Stop IGBT series represents a significant advancement in IGBT technology, offering high efficiency, fast switching, and robust performance for power conversion applications. Its integration into electronic systems requires careful attention to pin configurations, circuit connections, and thermal management practices to fully harness its capabilities in delivering efficient and reliable power management solutions.

FGA40N65SMD information

FGA40N65SMD Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
IGBTType:
Field Stop
Voltage-CollectorEmitterBreakdown(Max):
650 V
Current-Collector(Ic)(Max):
80 A
Current-CollectorPulsed(Icm):
120 A
Vce(on)(Max)@VgeIc:
2.5V @ 15V, 40A
Power-Max:
349 W
SwitchingEnergy:
820µJ (on), 260µJ (off)
InputType:
Standard
GateCharge:
119 nC
Td(on/off)@25°C:
12ns/92ns
TestCondition:
400V, 40A, 6Ohm, 15V
ReverseRecoveryTime(trr):
42 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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