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Name: FGA25N120ANTDTU-F109
Brand: ON Semiconductor
SKU: FGA25N120ANTDTU-F109
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor FGA25N120ANTDTU-F109

Part No.:: FGA25N120ANTDTU-F109

Manufacturer:: ON Semiconductor

Package:: TO-3P-3, SC-65-3

Datasheet:: FGA25N120ANTDTU-F109.pdf

Description:: IGBT 1200V 50A 312W TO3P

In Stock:: 2998

Quantity:: Add To Cart

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FGA25N120ANTDTU-F109 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FGA25N120ANTDTU-F109 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FGA25N120ANTDTU-F109 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FGA25N120ANTDTU-F109 Typical application Circuitry

FGA25N120ANTDTU-F109

The FGA25N120ANTDTU-F109 is a distinguished member of Fairchild Semiconductor's (now part of ON Semiconductor) IGBT (Insulated Gate Bipolar Transistor) lineup, designed specifically for high-efficiency and high-speed switching applications. This device is a testament to Fairchild's engineering expertise in creating semiconductors that meet the rigorous demands of modern power electronics, with a focus on optimizing performance in power conversion and control systems. The FGA25N120ANTDTU-F109 is engineered to address the needs of various applications, including but not limited to renewable energy inverters, motor drives, and power supply units, showcasing its versatility and reliability in handling high-power tasks.

1. Electrical Characteristics and Power Supply Adaptation: The FGA25N120ANTDTU-F109 is rated for high voltage operations, with a collector-emitter voltage (V_CE) capability of 1200V, making it suitable for systems that require robust voltage handling. Its design is optimized for use with power supplies that can deliver voltages within this range, ensuring the device can be integrated seamlessly into high-voltage power conversion circuits. The IGBT's ability to operate efficiently at these voltages highlights its suitability for a wide array of industrial and energy applications.

2. Pin Configuration and Connectivity Overview: Encased in a TO-3PN package, the FGA25N120ANTDTU-F109 features three primary terminals: the Collector (C), the Emitter (E), and the Gate (G). The Collector terminal is intended for connection to the high-voltage supply line, the Emitter terminal should be connected to the load or the circuit ground, and the Gate terminal receives the control signal, which modulates the device's operation. Accurate and secure connections to these terminals are critical for harnessing the full capabilities of the FGA25N120ANTDTU-F109 in sophisticated power electronics applications.

3. System Efficiency Enhancement through Strategic Connection Practices: Incorporating the FGA25N120ANTDTU-F109 into power electronics systems necessitates a detailed approach to ensure maximum efficiency and reliability. Designing the circuit to minimize resistance and inductance in the connections to the Collector and Emitter terminals is essential for reducing power losses. Furthermore, configuring the gate drive circuit to provide precise and fast switching signals to the Gate terminal, while employing appropriate gate resistors, is crucial for optimizing the IGBT's performance.

4. Thermal Management Techniques and Protective Strategies: Effective thermal management is paramount for maintaining the FGA25N120ANTDTU-F109's performance and longevity. Despite the TO-3PN package's inherent thermal dissipation capabilities, applications subject to high power levels may require additional cooling methods, such as heatsinks or forced air cooling, to manage heat effectively. Implementing thermal monitoring and employing protective circuits can further safeguard the device from over-temperature conditions, enhancing system reliability.

5. Circuit Integration Guidelines for Enhanced System Performance: The successful implementation of the FGA25N120ANTDTU-F109 in power management systems involves careful circuit design to exploit the device's capabilities fully. This includes deploying snubber circuits to protect against voltage transients, selecting capacitors and inductors that complement the IGBT's switching characteristics, and ensuring a clean, stable power supply for the gate drive. A meticulously planned PCB layout can significantly improve efficiency and minimize electromagnetic interference (EMI), contributing to the overall performance of the power system.

6. Comprehensive Component Selection for Optimized Circuit Design: Achieving optimal performance with the FGA25N120ANTDTU-F109 extends beyond the IGBT itself, requiring a holistic approach to selecting complementary components. This entails choosing gate drivers with adequate drive capability, precision capacitors for effective filtering, and suitable inductors to smooth current flow. The strategic selection of these components is crucial for maximizing the efficiency, performance, and durability of the system, emphasizing the importance of an integrated design philosophy.

In summary, the FGA25N120ANTDTU-F109 from Fairchild Semiconductor represents a pinnacle in IGBT technology, offering unmatched efficiency, robustness, and reliability for managing high-voltage, high-power applications. Its advanced electrical characteristics, combined with strategic connectivity, thermal management techniques, and comprehensive circuit design considerations, make it a key component for advancing power management solutions across a broad spectrum of industrial and energy domains.

FGA25N120ANTDTU-F109 information

FGA25N120ANTDTU-F109 Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Last Time Buy
IGBTType:
NPT and Trench
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
50 A
Current-CollectorPulsed(Icm):
90 A
Vce(on)(Max)@VgeIc:
2.65V @ 15V, 50A
Power-Max:
312 W
SwitchingEnergy:
4.1mJ (on), 960µJ (off)
InputType:
Standard
GateCharge:
200 nC
Td(on/off)@25°C:
50ns/190ns
TestCondition:
600V, 25A, 10Ohm, 15V
ReverseRecoveryTime(trr):
350 ns
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FGA25N120ANTDTU-F109.

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