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Name: FGY160T65SPD-F085
Brand: ON Semiconductor
SKU: FGY160T65SPD-F085
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor FGY160T65SPD-F085

Part No.:: FGY160T65SPD-F085

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:: FGY160T65SPD-F085.pdf

Description:: 650V FS GEN3 TRENCH IGBT

In Stock:: 450

Quantity:: Add To Cart

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FGY160T65SPD-F085 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FGY160T65SPD-F085 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FGY160T65SPD-F085 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FGY160T65SPD-F085 Typical application Circuitry

FGY160T65SPD-F085

The FGY160T65SPD-F085 is a state-of-the-art SiC (Silicon Carbide) MOSFET developed by ON Semiconductor, featuring advanced design tailored for high-efficiency power conversion applications. This component is part of ON Semiconductor's extensive portfolio of power semiconductors designed for optimizing energy efficiency across a broad spectrum of applications, including electric vehicle charging stations, renewable energy systems, and high-performance power supplies. The incorporation of Silicon Carbide technology in the FGY160T65SPD-F085 signifies a leap forward in achieving higher efficiency, faster switching speeds, and improved thermal performance compared to traditional silicon devices.

1. Electrical Specifications and Power Supply Requirements: The FGY160T65SPD-F085 is designed to operate at high voltages, with a maximum drain-source voltage (V_DS) of 650V, making it suitable for applications that demand efficient power handling at elevated voltage levels. This device supports power supplies operating within this voltage range, enabling seamless integration into high-voltage power conversion systems while ensuring optimal performance and reliability.

2. Connection Methodology and Detailed Pin Configuration: Encased in a TO-247 package, the FGY160T65SPD-F085 consists of three main terminals: the Gate (G), Drain (D), and Source (S). The Gate terminal acts as the control input, where the switching signal is applied to modulate the MOSFET's operation. The Drain terminal is connected to the high-voltage supply, facilitating the primary current flow through the device, while the Source terminal is typically connected to the load or circuit ground. Ensuring precise and reliable connections to these terminals is crucial for maximizing the efficiency and performance of the FGY160T65SPD-F085 in power electronics circuits.

3. Enhancing System Efficiency through Effective Connectivity: Integrating the FGY160T65SPD-F085 into power systems necessitates a meticulous approach to circuit design to maximize efficiency and reliability. This includes optimizing the gate drive circuit for accurate control over the MOSFET's rapid switching behavior, minimizing resistance and inductance in the paths between the MOSFET and other circuit components, and aligning the power supply voltage with the device's operational specifications to optimize performance and prevent overvoltage stress.

4. Advanced Thermal Management for Optimal Performance: Efficient thermal management is paramount in maintaining the FGY160T65SPD-F085's performance and extending its service life. The TO-247 package assists in dissipating heat, but additional cooling strategies, such as heatsinks or liquid cooling systems, may be required to effectively manage thermal loads in high-power applications. Implementing thermal monitoring and incorporating protective measures can mitigate the risk of thermal overload, ensuring the MOSFET operates within safe temperature ranges.

5. Circuit Design Considerations for Superior Functionality: Proper integration of the FGY160T65SPD-F085 into a power management system involves careful planning and circuit design. This includes employing snubber circuits to protect the MOSFET from voltage transients, selecting capacitors and inductors that complement the device's switching characteristics, and designing a PCB layout that minimizes electromagnetic interference while optimizing thermal management. A well-executed circuit design will leverage the FGY160T65SPD-F085's advanced switching capabilities and high efficiency, leading to enhanced performance in power conversion applications.

6. Comprehensive Component Selection for System Design Optimization: Achieving optimal performance with the FGY160T65SPD-F085 extends beyond the MOSFET itself and requires a holistic approach to selecting complementary components. This involves choosing gate drivers with adequate drive strength, precision capacitors for effective filtering, and suitable inductors to ensure smooth current delivery. The careful selection of these components is crucial for enhancing the efficiency, performance, and durability of the system, underscoring the importance of an integrated design approach.

In summary, the FGY160T65SPD-F085 from ON Semiconductor exemplifies the latest advancements in Silicon Carbide MOSFET technology, offering unparalleled efficiency, robustness, and reliability for handling high-voltage, high-power applications. Its sophisticated electrical characteristics, combined with strategic connectivity, advanced thermal management practices, and comprehensive circuit design considerations, make it an essential component for advancing power management solutions across a wide range of industrial and energy domains.

FGY160T65SPD-F085 information

FGY160T65SPD-F085 Specifications

Packaging:
Tube
Series:
Automotive, AEC-Q101
ProductStatus:
Active
IGBTType:
Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max):
650 V
Current-Collector(Ic)(Max):
240 A
Current-CollectorPulsed(Icm):
480 A
Vce(on)(Max)@VgeIc:
2.05V @ 15V, 160A
Power-Max:
882 W
SwitchingEnergy:
12.4mJ (on), 5.7mJ (off)
InputType:
Standard
GateCharge:
-
Td(on/off)@25°C:
53ns/98ns
TestCondition:
400V, 160A, 15V
ReverseRecoveryTime(trr):
132 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

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6. What is the process for return or replacement of FGY160T65SPD-F085?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FGY160T65SPD-F085.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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