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Name: NGTB50N120FL2WG
Brand: ON Semiconductor
SKU: NGTB50N120FL2WG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor NGTB50N120FL2WG

Part No.:: NGTB50N120FL2WG

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:: NGTB50N120FL2WG.pdf

Description:: IGBT 1200V 100A 535W TO247

In Stock:: 2397

Quantity:: Add To Cart

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NGTB50N120FL2WG Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
IGBTType:
Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
100 A
Current-CollectorPulsed(Icm):
200 A
Vce(on)(Max)@VgeIc:
2.2V @ 15V, 50A
Power-Max:
535 W
SwitchingEnergy:
4.4mJ (on), 1.4mJ (off)
InputType:
Standard
GateCharge:
311 nC
Td(on/off)@25°C:
118ns/282ns
TestCondition:
600V, 50A, 10Ohm, 15V
ReverseRecoveryTime(trr):
256 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

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NGTB50N120FL2WG information

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NGTB50N120FL2WG Typical application Circuitry

NGTB50N120FL2WG

The NGTB50N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching. It's a power semiconductor device used in various applications where high efficiency, high speed switching, and reliability are critical.

Applications:

The NGTB50N120FL2WG finds its use in a range of applications, including but not limited to, renewable energy inverters, UPS (Uninterruptible Power Supplies), power factor correction circuits, and motor drives.

Key Parameters and Features:

- Collector-Emitter Voltage (Vce): It supports a high breakdown voltage, typically up to 1200V, which is crucial for applications requiring high voltage handling capability.

- Current Rating: Suitable for high-power applications, it can manage a continuous collector current of up to 50A.

- Switching Speed: Fast switching capabilities, essential for reducing energy losses during the transition from on to off states and vice versa.

- Low Saturation Voltage: This reduces on-state losses, enhancing overall efficiency.

- High Input Impedance: This feature allows for easy driving with MOSFET/IGBT drivers, reducing the power required from the control circuit.

Application Scenario - Motor Drive Circuit:

- Circuit Connection Overview: In a motor drive application, the NGTB50N120FL2WG can be used in an H-bridge configuration to control the speed and direction of a DC motor. The H-bridge allows for the motor to be driven in both directions and to be stopped efficiently.

- Gate Drive Considerations: Each NGTB50N120FL2WG gate is driven by a gate driver IC, such as the IR2110. The gate driver ICs are connected to the IGBTs' gates through resistors to limit the inrush current. This setup is crucial for protecting the device and ensuring fast switching.

- PWM Control: The speed of the motor is controlled by a microcontroller that generates a Pulse Width Modulation (PWM) signal. The PWM signal is fed to the gate driver ICs, controlling the switching frequency of the NGTB50N120FL2WG devices in the H-bridge.

- Freewheeling Diodes: To minimise voltage spikes, each IGBT in the H-bridge is connected to a freewheeling diode, which provides a channel for the inductive current when the IGBT shuts off.

- Protection Circuitry: Overcurrent and overvoltage protection circuits are essential to protect the NGTB50N120FL2WG devices from potential damage. This could include sensors and comparators that shut down the drive signals in fault conditions.

Design Considerations:

- Thermal Management: The NGTB50N120FL2WG generates heat during operation, especially at high switching frequencies or high current levels. Sufficient heat sinking and potentially active cooling are necessary to maintain the temperature within acceptable bounds.

- Gate Drive Voltage: It's important to make sure the gate drive voltage for the NGTB50N120FL2WG is within the designated range. Too low voltage will not fully turn on the device, increasing conduction losses, while too high voltage could damage the gate oxide layer.

- Dead Time Control: In the H-bridge configuration, it's essential to ensure there's a dead time between turning off one IGBT and turning on the opposite IGBT to prevent short circuits. This requires careful timing control in the PWM signal generation.

In summary, when designing a motor drive circuit using the NGTB50N120FL2WG, engineers must consider the device's electrical characteristics, the circuit's overall design, including gate driving, protection, and thermal management, to ensure efficient, reliable operation.

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