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Name: NCP5106BDR2G
Brand: ON Semiconductor
SKU: NCP5106BDR2G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NCP5106BDR2G

Part No.:: NCP5106BDR2G

Manufacturer:: ON Semiconductor

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: NCP5106BDR2G.pdf

Description:: IC GATE DRVR HALF-BRIDGE 8SOIC

In Stock:: 2511

Quantity:: Add To Cart

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NCP5106BDR2G Typical application Circuitry

NCP5106BDR2G

The NCP5106BDR2G is a high-voltage gate driver IC, part of the NCP series produced by ON Semiconductor. This gate driver is designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration, making it an essential component in applications such as power converters, inverters, and motor control systems. It is commonly utilized in scenarios where efficient and reliable switching of high-voltage power transistors is critical.

1. Circuit Connection and Pin Configuration: The NCP5106BDR2G features several important pins for its functionality. These include the high-side (HO) and low-side (LO) output pins to drive the gates of the MOSFETs or IGBTs, a high voltage (VB) pin connected to the supply voltage of the high-side transistor, a ground (COM) pin, a logic input (IN) pin to receive the PWM signal, and a VCC pin for the low-side driving circuit. Precise connection of these pins is essential for the gate driver to function correctly in any power electronic system.

2. Power Supply and Voltage Specifications: Operating within a voltage range typically between 10V to 20V for the VCC pin, the NCP5106BDR2G can accommodate different power requirements. The VB pin's voltage depends on the high-side transistor's specifications, often higher, up to 600V. It's critical to ensure that the supply voltages are within the specified range to prevent damage to the gate driver.

3. Integration into Power Electronic Systems: The primary role of the NCP5106BDR2G in power systems is to control the timing and transition of high and low-side power transistors. It translates the low-power input PWM signals into high-current drive signals for the MOSFETs or IGBTs, ensuring efficient switching. Proper integration requires programming the control system to synchronize the NCP5106BDR2G with the rest of the power electronics circuitry.

4. Performance and Efficiency in Applications: The NCP5106BDR2G stands out for its ability to drive high-voltage transistors efficiently, with minimal delay and power loss. It is instrumental in enhancing the overall efficiency and reliability of power electronic systems, making it suitable for a wide range of high-power applications.

5. Circuit Design and Layout Considerations: In designing circuits with the NCP5106BDR2G, it's important to consider the layout for minimizing stray inductance and capacitance, which can affect the performance of high-speed switching circuits. Attention should be given to the routing of the HO and LO signals, ensuring minimal path resistance and inductance.

6. Compliance with Safety and Quality Standards: The NCP5106BDR2G adheres to industry safety and quality standards, ensuring reliable operation in various power electronics applications. It is designed to meet the stringent requirements of high-voltage and high-power systems.

7. Handling and Installation Procedures: As with any semiconductor device, the NCP5106BDR2G requires careful handling, particularly to prevent damage due to electrostatic discharge (ESD). Using appropriate ESD protection during handling and installation is crucial for maintaining the device's integrity and functionality.

In conclusion, the NCP5106BDR2G is a vital gate driver IC for high-voltage power applications. Its efficient functionality involves precise circuit connections, adherence to power specifications, strategic integration into power systems, leveraging its high-performance capabilities, meticulous circuit design, compliance with industry standards, and careful handling and installation. These practices ensure that the NCP5106BDR2G operates effectively, enabling robust and efficient control of power transistors in a variety of applications.

NCP5106BDR2G information

NCP5106BDR2G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
DrivenConfiguration:
Half-Bridge
ChannelType:
Independent
NumberofDrivers:
2
GateType:
IGBT, N-Channel MOSFET
Voltage-Supply:
10V ~ 20V
LogicVoltage-VILVIH:
0.8V, 2.3V
Current-PeakOutput(SourceSink):
250mA, 500mA
InputType:
Non-Inverting
HighSideVoltage-Max(Bootstrap):
600 V
Rise/FallTime(Typ):
85ns, 35ns
OperatingTemperature:
-40°C ~ 125°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of NCP5106BDR2G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NCP5106BDR2G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations