What is the Additional Feature ?

Name: LMG1020YFFR
Brand: Texas Instruments
SKU: LMG1020YFFR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments LMG1020YFFR

Part No.:: LMG1020YFFR

Manufacturer:: Texas Instruments

Package:: 6-UFBGA, DSBGA

Datasheet:: LMG1020YFFR.pdf

Description:: IC GATE DRVR LOW-SIDE 6DSBGA

In Stock:: 2979

Quantity:: Add To Cart

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LMG1020YFFR Typical application Circuitry

LMG1020YFFR

The LMG1020YFFR is a state-of-the-art, low-side GaN (Gallium Nitride) driver designed for high-speed applications. This chip is renowned for its ability to drive GaN FETs efficiently, making it a pivotal component in advanced electronic circuits. The LMG1020YFFR excels in applications requiring high frequency, high efficiency, and compact size, such as LiDAR, wireless power transfer, and DC-DC conversion.

High-Speed Operation: Fast Propagation Delays

The LMG1020YFFR features incredibly fast propagation delays, enabling high-speed operation crucial for applications like LiDAR systems where rapid signal processing is essential.

Efficient GaN FET Driving: Optimized for GaN Technology

Designed specifically to drive GaN FETs, the LMG1020YFFR optimizes the performance of these transistors, providing efficient switching and high power density, essential for compact, high-performance power converters.

Compact Size: Small Package Footprint

The small package footprint of the LMG1020YFFR allows for its integration into space-constrained applications, offering exceptional performance without the penalty of increased size.

Application Scenario: LiDAR System Transmitter

A critical application of the LMG1020YFFR is in the transmitter circuit of a LiDAR system, where it drives a GaN FET to modulate the laser diode rapidly.

Circuit Configuration:

- GaN FET Driving: Connect the output of the LMG1020YFFR (Pin 6) directly to the gate of a GaN FET. The source of the FET is grounded, and its drain is connected to the laser diode's cathode.

- Input Signal: The input signal to the LMG1020YFFR is applied to Pin 3 (IN), with Pin 1 (GND) connected to the ground to complete the circuit.

- Power Supply: Apply the VDD to Pin 5, ensuring that the voltage level is within the specified range for optimal performance.

Design Considerations:

- Impedance Matching: Carefully match the impedance between the LMG1020YFFR output and the GaN FET gate to minimize reflections and ensure efficient energy transfer.

- Thermal Management: Implement adequate heat sinking for the GaN FET, as rapid switching can generate significant heat, impacting system reliability.

- Signal Integrity: Use short, wide traces for the connection between the LMG1020YFFR and the GaN FET to reduce inductance and preserve signal integrity.

- Protection Mechanisms: Incorporate protection diodes at critical points to safeguard the LMG1020YFFR and the GaN FET against voltage spikes and transients.

Incorporating the LMG1020YFFR into a LiDAR system's transmitter circuit exemplifies its capability to drive GaN FETs rapidly and efficiently, critical for achieving high modulation rates. By addressing impedance matching, thermal management, signal integrity, and protection mechanisms, designers can leverage the LMG1020YFFR's features to develop high-performance, reliable LiDAR systems. The LMG1020YFFR stands out as a key enabler in advanced electronic designs, facilitating the development of compact, efficient, and high-speed applications.

LMG1020YFFR information

LMG1020YFFR Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
DrivenConfiguration:
Low-Side
ChannelType:
Single
NumberofDrivers:
1
GateType:
N-Channel, P-Channel MOSFET
Voltage-Supply:
4.75V ~ 5.25V
LogicVoltage-VILVIH:
1.8V, 1.7V
Current-PeakOutput(SourceSink):
7A, 5A
InputType:
Inverting, Non-Inverting
HighSideVoltage-Max(Bootstrap):
-
Rise/FallTime(Typ):
375ps, 350ps
OperatingTemperature:
-40°C ~ 125°C (TJ)
MountingType:
Surface Mount

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of LMG1020YFFR.

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