What is the Additional Feature ?

Name: LMG1020YFFT
Brand: Texas Instruments
SKU: LMG1020YFFT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments LMG1020YFFT

Part No.:: LMG1020YFFT

Manufacturer:: Texas Instruments

Package:: 6-UFBGA, DSBGA

Datasheet:: LMG1020YFFT.pdf

Description:: IC GATE DRVR LOW-SIDE 6DSBGA

In Stock:: 2494

Quantity:: Add To Cart

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LMG1020YFFT Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
DrivenConfiguration:
Low-Side
ChannelType:
Single
NumberofDrivers:
1
GateType:
N-Channel, P-Channel MOSFET
Voltage-Supply:
4.75V ~ 5.25V
LogicVoltage-VILVIH:
1.8V, 1.7V
Current-PeakOutput(SourceSink):
7A, 5A
InputType:
Inverting, Non-Inverting
HighSideVoltage-Max(Bootstrap):
-
Rise/FallTime(Typ):
375ps, 350ps
OperatingTemperature:
-40°C ~ 125°C (TJ)
MountingType:
Surface Mount

LMG1020YFFT this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including LMG1020YFFT price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for LMG1020YFFT to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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LMG1020YFFT information

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LMG1020YFFT Typical application Circuitry

LMG1020YFFT

The LMG1020YFFT is a cutting-edge, low-side GaN (Gallium Nitride) driver designed specifically for ultra-fast switching applications. This chip excels in driving GaN FETs, providing efficient, high-frequency operation in compact, power-dense systems. It is particularly suited for applications like high-speed DC-DC converters, wireless power transfer, RF power amplifiers, and pulse-width modulated (PWM) controllers. The LMG1020YFFT stands out due to its rapid propagation delay, high peak output current, and wide supply voltage range, among other features.

Ultra-Fast Switching: Exceptional Propagation Delay

The LMG1020YFFT features an ultra-fast propagation delay, enabling high-speed operation critical for efficient power conversion and RF amplification.

Optimized for GaN FETs: High Peak Output Current

Designed to drive GaN FETs, the LMG1020YFFT can deliver high peak output currents, ensuring rapid charging and discharging of the FET gate capacitance, which is essential for fast switching applications.

Versatility: Wide Supply Voltage Range

The wide supply voltage range of the LMG1020YFFT accommodates various application needs, allowing for flexible circuit design and implementation.

In the context of a high-speed DC-DC converter, the LMG1020YFFT is utilized to drive a GaN FET, facilitating efficient power conversion with minimal loss and high switching frequency.

Circuit Setup:

- GaN FET Gate Drive: The LMG1020YFFT's output (Pin 5) is directly connected to the gate of the GaN FET. This configuration ensures that the FET is rapidly switched on and off, enhancing the converter's efficiency.

- Signal Input: Apply the PWM control signal to Pin 3 (IN) of the LMG1020YFFT. Pin 1 (GND) should be connected to the system ground to establish a common reference point.

- Power Supply Connection: Provide the VDD to Pin 4, adhering to the chip's specified voltage range to optimize performance and reliability.

Design Considerations:

- Gate Resistance: Incorporate an appropriate gate resistor between the LMG1020YFFT output and the GaN FET gate to control the switching speed and mitigate overshoot or ringing.

- Power Decoupling: Use decoupling capacitors near the LMG1020YFFT's VDD pin to stabilize the supply voltage, especially important in high-speed switching environments to prevent noise interference.

- Thermal Management: Given the high switching frequencies, ensure adequate thermal management for the GaN FET, possibly through the use of heat sinks or thermal pads, to maintain operational stability.

- Layout Considerations: Minimize the trace lengths between the LMG1020YFFT and the GaN FET to reduce inductance and capacitance, preserving signal integrity and switching performance.

Employing the LMG1020YFFT in a high-speed DC-DC converter circuit exemplifies its ability to drive GaN FETs effectively, achieving high efficiency and frequency. By meticulously addressing gate resistance, power decoupling, thermal management, and layout considerations, designers can exploit the operational amplifier's capabilities to develop advanced, reliable power conversion systems. The LMG1020YFFT emerges as a pivotal component in modern electronics, facilitating the development of compact, efficient, and high-performance applications.

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6. What is the process for return or replacement of LMG1020YFFT?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of LMG1020YFFT.

(3)The PartNo is unused and only in the original unpacked packaging.

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