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Name: LM5109BQNGTTQ1
Brand: Texas Instruments
SKU: LM5109BQNGTTQ1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments LM5109BQNGTTQ1

Part No.:: LM5109BQNGTTQ1

Manufacturer:: Texas Instruments

Package:: 8-WDFN Exposed Pad

Datasheet:: LM5109BQNGTTQ1.pdf

Description:: IC GATE DRVR HALF-BRIDGE 8WSON

In Stock:: 2043

Quantity:: Add To Cart

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LM5109BQNGTTQ1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
Automotive, AEC-Q100
ProductStatus:
Active
DrivenConfiguration:
Half-Bridge
ChannelType:
Independent
NumberofDrivers:
2
GateType:
N-Channel MOSFET
Voltage-Supply:
8V ~ 14V
LogicVoltage-VILVIH:
0.8V, 2.2V
Current-PeakOutput(SourceSink):
1A, 1A
InputType:
Non-Inverting
HighSideVoltage-Max(Bootstrap):
108 V
Rise/FallTime(Typ):
15ns, 15ns
OperatingTemperature:
-40°C ~ 125°C (TJ)
MountingType:
Surface Mount

LM5109BQNGTTQ1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including LM5109BQNGTTQ1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for LM5109BQNGTTQ1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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LM5109BQNGTTQ1 information

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LM5109BQNGTTQ1 Typical application Circuitry

The LM5109BQNGTTQ1 is specifically engineered as a gate driver to operate high voltage, high-side, and low-side N-Channel MOSFETs in power topologies like synchronous buck, half-bridge, or similar configurations. This chip is specifically designed for automotive applications and is part of Texas Instruments' qualified automotive product line.

Features of LM5109BQNGTTQ1

1. High-Speed Operation: The LM5109BQNGTTQ1 offers fast propagation delays, ensuring quick responses in the operation of the system.

2. High-Voltage Capabilities: This gate driver can withstand a high voltage of up to 100V on its VDD and HB pins.

3. Independent Inputs: The chip has independent high-side and low-side inputs, providing flexibility in controlling the MOSFETs.

4. Adaptive Dead Time Protection: LM5109BQNGTTQ1 features unique adaptive dead time circuitry to prevent both MOSFETs from conducting simultaneously.

Typical Applications for LM5109BQNGTTQ1

The LM5109BQNGTTQ1 is typically used in various applications such as automotive power trains, electronic power steering systems, and hybrid/electric vehicle power systems.

Design Guide for LM5109BQNGTTQ1

One potential application of the LM5109BQNGTTQ1 is in a half-bridge converter circuit:

1. VDD Pin (Pin 3): This pin is the power supply input for the chip's low-side driver. Connect it to a 12V power supply.

2. HB Pin (Pin 6): This pin is connected to a bootstrap capacitor. Between the HB and HS pins, connect the bootstrap capacitor.

3. HS Pin (Pin 5): This is the floating ground reference for the high-side gate driver and should be connected to the source of the high-side MOSFET.

4. HI and LI Pins (Pins 1 and 2): These are the input pins for the high-side and low-side gate drivers, respectively. Connect them to your PWM signals.

5. HO and LO Pins (Pins 7 and 8): These pins output the gate drive signals for the high-side and low-side MOSFETs. Connect them to the gate of your respective high-side and low-side MOSFETs.

Design Considerations:

1. Bootstrap Circuit: Be sure to properly size your bootstrap capacitor. This capacitor powers the high-side driver when it's activated.

2. Dead Time: Carefully design the PWM signals to include a "dead time" where both signals are off. This is important to prevent shoot-through.

3. Component Ratings: Ensure the power supply voltage, the MOSFETs' voltage, and the current ratings match with the system requirements.

4. PCB Layout: A good PCB layout minimizes trace inductances, which helps to reduce ringing and prevent potential damage to the LM5109BQNGTTQ1 or the MOSFETs.

Always refer to the LM5109BQNGTTQ1 datasheet for more comprehensive details and sample application circuits.

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6. What is the process for return or replacement of LM5109BQNGTTQ1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the LM5109BQNGTTQ1 we delivered, we will accept the replacement or return of the LM5109BQNGTTQ1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of LM5109BQNGTTQ1.

(3)The PartNo is unused and only in the original unpacked packaging.

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