IRS21864STRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRS21864STRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRS21864STRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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The IRS21864STRPBF is an esteemed member of the driver IC family, designed to efficiently manage and switch IGBTs and MOSFETs. Developed by Infineon Technologies, the IRS21864STRPBF boasts an insulated gate bipolar transistor (IGBT) driver capability. The chip is endowed with specialized functionalities to provide protection, gate drive, and optimal system performance. A closer look at the IRS21864STRPBF's specifications and its interface instructions is essential to harness its full potential.
1. VCC (Logic Supply Voltage): Connect this pin to a clean DC voltage supply, usually in the range of 10-20V. A decoupling capacitor between VCC and VSS is highly recommended to ensure voltage stability.
2. VSS (Logic Ground): This serves as the logic ground for the IRS21864STRPBF. Connect this directly to the system's ground plane for noise-free operation.
3. IN (Input Signal): Drive this pin with the PWM or control signal intended to modulate the connected IGBT or MOSFET. This input is optoisolator-compatible, making it suitable for isolated control signals.
4. SD (Shut Down): An essential feature of the IRS21864STRPBF is its shutdown capability. Applying a logic signal to this pin will shut down both the high and low outputs, offering a safe method for emergency stops or fault conditions.
5. LO (Low-Side Output): This is the output driver for the low-side IGBT or MOSFET. It sources/sinks the gate charge for the connected power switch. Connect this directly to the gate terminal of the low-side switching device.
6. HO (High-Side Output): This terminal drives the gate of the high-side IGBT or MOSFET. Secure HO to the gate of the high-side switch. To reduce parasitic inductances, make sure this connection is as short as feasible.
7. VS (Floating Ground): This pin serves as the reference for the high-side output. Attach it to the high-side MOSFET's source or the high-side IGBT's emitter.
8. VB (High-Side Floating Bias Voltage): Connect this to a floating supply voltage source. Typically, a bootstrap circuit, composed of a diode and a capacitor, is connected here to provide the necessary bias voltage for the high-side driver.
9. Added Circuitry Insights:
- Bootstrap Arrangement: Incorporating a bootstrap diode and capacitor between the VCC and VB pins, with the negative terminal of the capacitor connected to VS, is pivotal for the IRS21864STRPBF's high-side drive functionality.
- Protection Mechanisms: For the safeguarding of the IRS21864STRPBF, a gate resistor to dampen potential oscillations and a zener diode to clamp voltage spikes at the gate are commonly employed.
- Operational Caution: Ensure that the voltages and signals applied to the IRS21864STRPBF are within the manufacturer's specified limits to avoid potential damage.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of IRS21864STRPBF.
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