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Name: IRGP50B60PD1PBF-INF
Brand: Infineon Technologies
SKU: IRGP50B60PD1PBF-INF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IRGP50B60PD1PBF-INF

Part No.:: IRGP50B60PD1PBF-INF

Manufacturer:: Infineon Technologies

Package:: TO-247-3

Datasheet:: IRGP50B60PD1PBF-INF.pdf

Description:: AUTOMOTIVE WARP2 IGBT ULTRAFAST

In Stock:: 3772

Quantity:: Add To Cart

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IRGP50B60PD1PBF-INF Specifications

Packaging:
Bulk
Series:
-
ProductStatus:
Active
IGBTType:
NPT
Voltage-CollectorEmitterBreakdown(Max):
600 V
Current-Collector(Ic)(Max):
75 A
Current-CollectorPulsed(Icm):
150 A
Vce(on)(Max)@VgeIc:
2.85V @ 15V, 50A
Power-Max:
390 W
SwitchingEnergy:
255µJ (on), 375µJ (off)
InputType:
Standard
GateCharge:
205 nC
Td(on/off)@25°C:
30ns/130ns
TestCondition:
390V, 33A, 3.3Ohm, 15V
ReverseRecoveryTime(trr):
42 ns
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IRGP50B60PD1PBF-INF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRGP50B60PD1PBF-INF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRGP50B60PD1PBF-INF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRGP50B60PD1PBF-INF information

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IRGP50B60PD1PBF-INF Typical application Circuitry

The IRGP50B60PD1PBF-INF, an integral product from Infineon Technologies, is part of their esteemed IGBT (Insulated Gate Bipolar Transistor) collection. Leveraging the superior characteristics of both MOSFETs and BJTs, this device delivers impressive performance, particularly in applications demanding high voltage and current capabilities. Acknowledged for its speed, efficiency, and power density, the IRGP50B60PD1PBF-INF emerges as a preferred choice for various power electronics applications.

1. Blueprint for Circuit Connection:

- Collector (C): This pin acts as the main current output terminal. Depending on the specific application, it might be connected directly to the positive terminal of a power supply (in a common emitter configuration) or to the load (in a common collector setup).

- Gate (G): The Gate controls the switching activity of the IGBT. By applying a voltage to this terminal, the IGBT transitions between its conductive and non-conductive states. For the IRGP50B60PD1PBF-INF, the Gate typically links to a pulse-width modulation (PWM) signal source, which can be a microcontroller, DSP, or dedicated driver IC. Incorporating a gate resistor in this pathway can modulate the switching speed, offering protection against sudden voltage spikes or unwanted oscillations.

- Emitter (E): Serving as the primary current input, the Emitter often connects to the circuit's ground or, in certain configurations, to the load itself.

2. Supplementary Integration Recommendations:

- Gate-Emitter Resistor: To maintain the IRGP50B60PD1PBF-INF in an 'off' state when no signal is present, consider placing a resistor between the Gate and Emitter. This pull-down resistor ensures the device doesn't accidentally turn on due to noise or floating voltages.

- Snubber Network: Particularly in applications with rapid switching frequencies, implementing a snubber network (comprising a resistor and capacitor) across the Collector and Emitter can be beneficial. This diminishes voltage transients and safeguards the IGBT from potential over-voltages.

- Freewheeling Diode: Given that the IRGP50B60PD1PBF-INF may frequently serve inductive loads, integrating a freewheeling diode parallel to the load becomes pivotal. This diode protects the IGBT by providing a path for inductive currents when the IGBT turns off.

- Heat Dissipation Mechanisms: It's paramount to remember that IGBTs, like the IRGP50B60PD1PBF-INF, generate heat, especially in high-power settings. Hence, integrating heat sinks or other thermal management solutions ensures the device functions within its thermal limits, promoting longevity.

In essence, the IRGP50B60PD1PBF-INF epitomizes the advancements in power electronics, offering a blend of efficiency and resilience. As with any high-power semiconductor, referencing its datasheet, adhering to specified parameters, and seeking expert guidance can ensure the IRGP50B60PD1PBF-INF's seamless incorporation into any circuit design. Through careful design considerations and by adhering to best practices, one can harness the full potential of this Infineon IGBT for various applications.

IRGP50B60PD1PBF-INF FAQ

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6. What is the process for return or replacement of IRGP50B60PD1PBF-INF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRGP50B60PD1PBF-INF we delivered, we will accept the replacement or return of the IRGP50B60PD1PBF-INF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRGP50B60PD1PBF-INF.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations