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Name: IRG4PH50UDPBF
Brand: Infineon Technologies
SKU: IRG4PH50UDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRG4PH50UDPBF

Part No.:: IRG4PH50UDPBF

Manufacturer:: Infineon Technologies

Package:: TO-247-3

Datasheet:: IRG4PH50UDPBF.pdf

Description:: IGBT 1200V 45A 200W TO247AC

In Stock:: 2469

Quantity:: Add To Cart

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IRG4PH50UDPBF Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Obsolete
IGBTType:
-
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
45 A
Current-CollectorPulsed(Icm):
180 A
Vce(on)(Max)@VgeIc:
3.7V @ 15V, 24A
Power-Max:
200 W
SwitchingEnergy:
2.1mJ (on), 1.5mJ (off)
InputType:
Standard
GateCharge:
160 nC
Td(on/off)@25°C:
47ns/110ns
TestCondition:
800V, 24A, 5Ohm, 15V
ReverseRecoveryTime(trr):
90 ns
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IRG4PH50UDPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRG4PH50UDPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRG4PH50UDPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRG4PH50UDPBF information

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IRG4PH50UDPBF Typical application Circuitry

IRG4PH50UDPBF

The IRG4PH50UDPBF is an integral part of the IRG Power series, known for its specialized focus on high-efficiency, high-speed switching, and power management capabilities across a diverse range of applications. This device, an insulated gate bipolar transistor (IGBT), is a perfect fit for high-voltage, high-power applications like inverter systems, AC/DC converters, and motor drives because it combines the easy drive characteristics of a MOSFET with the high current and low saturation voltage capability of a bipolar transistor.

1. Operational Voltage and Circuit Compatibility Overview: With a collector-emitter voltage rating of 1200V, the IRG4PH50UDPBF is engineered to efficiently manage and convert high levels of power within electrical systems operating at such voltages. This characteristic enables the IGBT to be a critical component in the design of robust power conversion systems, offering enhanced system efficiency and reliability within applications that necessitate substantial voltage handling and energy conversion capabilities.

2. Pin Configuration and Implementation Strategy: Housed in a TO-247 package, the IRG4PH50UDPBF is equipped with three pins: gate (G), collector (C), and emitter (E), each serving a distinct function in the device's operation. The gate pin controls the IGBT's switching operation, acting as the interface for the input signal. The collector pin, designed for connection to the power supply's positive side, and the emitter pin, typically connected to the circuit's ground, facilitate the flow of current through the device when it is in the "on" state. This structured pin layout supports straightforward integration into electronic designs, allowing for efficient utilization of the IGBT's power handling capabilities.

3. Thermal Management Solutions for Sustained Performance: Given its capacity for handling high power, the IRG4PH50UDPBF incorporates advanced solutions for thermal management to ensure stable operation under varying conditions. Effective heat dissipation techniques, including the use of heat sinks and thermal interface materials, are crucial for maintaining the IGBT within its operational thermal limits, thereby extending its longevity and ensuring consistent performance even in demanding applications.

4. Comprehensive Approach to Enhancing Device Efficiency: The integration of the IRG4PH50UDPBF into power electronic systems requires a detailed understanding of its electrical and thermal characteristics. This involves careful circuit layout design to minimize parasitic elements and optimize the flow of current, thereby reducing losses and enhancing the overall efficiency and reliability of the IGBT in high-speed switching applications.

5. Optimization of Power Supply and Signal Integrity Considerations: Maximizing the IRG4PH50UDPBF's performance necessitates a focus on refining the power supply design and ensuring the integrity of signal pathways. Establishing efficient, low-resistance routes for power and minimizing the length of signal traces are essential strategies to diminish energy losses and maintain clear signal transmission, ensuring reliable and efficient IGBT operation.

6. Prioritizing Design Factors for Enhanced System Reliability: Implementing the IRG4PH50UDPBF in high-power systems requires careful consideration of design elements that contribute to overall system reliability and durability. This includes integrating protective features to guard against overcurrent, overvoltage, and thermal stress, which help to mitigate potential damage to the IGBT and associated components, thereby enhancing system resilience and longevity.

7. Future-Proofing Applications with the IRG4PH50UDPBF: Utilizing the IRG4PH50UDPBF in cutting-edge power management and conversion applications not only addresses current efficiency and performance demands but also equips systems to meet the challenges of future technological developments. Its robust design, superior thermal management, and high-speed switching efficiency make it a cornerstone component for developing advanced electronic systems that require high-level power handling and conversion capabilities.

The IRG4PH50UDPBF stands as a testament to the IRG series' commitment to advancing the field of power electronics, offering a high-performance, efficient solution for demanding applications that require high-voltage handling, rapid switching, and dependable power management. With its precise voltage rating, structured pin layout, innovative thermal management techniques, and emphasis on optimizing both system reliability and performance, the IRG4PH50UDPBF is pivotal in propelling electronic systems toward greater energy efficiency, operational stability, and preparedness for the technological advancements of tomorrow.

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6. What is the process for return or replacement of IRG4PH50UDPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRG4PH50UDPBF we delivered, we will accept the replacement or return of the IRG4PH50UDPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRG4PH50UDPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations