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Name: IR2113STR
Brand: Infineon Technologies
SKU: IR2113STR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IR2113STR

Part No.:: IR2113STR

Manufacturer:: Infineon Technologies

Package:: 16-SOIC (0.295, 7.50mm Width)

Datasheet:: IR2113STR.pdf

Description:: IC GATE DRVR HALF-BRIDGE 16SOIC

In Stock:: 3263

Quantity:: Add To Cart

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IR2113STR Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Obsolete
DrivenConfiguration:
Half-Bridge
ChannelType:
Independent
NumberofDrivers:
2
GateType:
IGBT, N-Channel MOSFET
Voltage-Supply:
3.3V ~ 20V
LogicVoltage-VILVIH:
6V, 9.5V
Current-PeakOutput(SourceSink):
2A, 2A
InputType:
Non-Inverting
HighSideVoltage-Max(Bootstrap):
600 V
Rise/FallTime(Typ):
25ns, 17ns
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Surface Mount

IR2113STR this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IR2113STR price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IR2113STR to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IR2113STR information

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IR2113STR Typical application Circuitry

IR2113STR

The IR2113STR is a member of the IR2113 series, which consists of IGBT and MOSFET drivers with distinct high and low side referenced output channels that operate at high voltages and fast speeds. This series is specifically designed for a wide range of applications, including motor drives, inverter circuits, and switching power supplies. The IR2113 series is known for its robustness and efficiency, making it an ideal choice for managing high-power switching in complex electronic systems.

1. High and Low Side Driver (Dual Channel): The IR2113STR is a dual-channel driver, capable of controlling both high-side and low-side MOSFETs or IGBTs. This feature enables efficient management of half-bridge and full-bridge topologies in power electronics circuits.

2. Pin Configuration (Precise Pin Layout): The IR2113STR's pin configuration is designed to facilitate easy integration into various circuit designs. Key pins include VCC (supply voltage for the low-side and logic), VB (floating supply for the high-side driver), HIN and LIN (high and low side input signals), HO and LO (high and low side driver outputs), COM (common ground for the low-side), and VS (floating ground for the high-side).

3. Bootstrap Circuit Integration (High-Side Drive): For driving the high-side MOSFET or IGBT, a bootstrap capacitor is typically connected between the VB and VS pins. This capacitor, in conjunction with an external diode, provides the necessary charge to power the high-side driver, enabling it to operate above the ground level.

4. Input Signal Compatibility (HIN and LIN): The HIN (High side INput) and LIN (Low side INput) pins are compatible with standard logic levels, allowing for direct interfacing with microcontrollers or PWM controllers. These inputs control the HO and LO output drivers, respectively.

5. Output Channels (HO and LO): The external MOSFETs or IGBTs' gates receive the driving signals from the HO (High side output) and LO (Low side output) pins. These outputs are capable of driving significant current, ensuring fast and efficient switching of the power devices.

6. Protection Features (Under-Voltage Lockout): The IR2113STR includes under-voltage lockout protection for both VCC and VB, ensuring that the driver operates reliably under proper supply conditions, thereby protecting the power devices from inadequate gate drive.

7. Circuit Implementation (Half-Bridge Configuration): In typical applications, the IR2113STR is used in a half-bridge circuit configuration, where it drives one high-side and one low-side MOSFET or IGBT. The proper sequencing of the HIN and LIN inputs ensures that the high and low-side switches do not conduct simultaneously, preventing shoot-through in the half-bridge.

In summary, the IR2113STR's efficient dual-channel design, along with its comprehensive pin configuration and integrated protection features, make it a versatile and reliable solution for high-voltage, high-speed power switching applications. Careful consideration of the bootstrap circuit for the high-side drive, along with appropriate input signal management and adherence to proper supply voltage requirements, is crucial in harnessing the full capabilities of the IR2113STR in electronic circuit designs.

IR2113STR FAQ

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3. Are the IR2113STR price and inventory displayed accurate?

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6. What is the process for return or replacement of IR2113STR?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IR2113STR we delivered, we will accept the replacement or return of the IR2113STR only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IR2113STR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations