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Name: IKW75N60TAFKSA1
Brand: Infineon Technologies
SKU: IKW75N60TAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IKW75N60TAFKSA1

Part No.:: IKW75N60TAFKSA1

Manufacturer:: Infineon Technologies

Package:: TO-247-3

Datasheet:: IKW75N60TAFKSA1.pdf

Description:: IGBT TRENCH/FS 600V 80A TO247-3

In Stock:: 2825

Quantity:: Add To Cart

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IKW75N60TAFKSA1 Specifications

Packaging:
Bulk,Tube
Series:
TrenchStop®
ProductStatus:
Obsolete
IGBTType:
Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max):
600 V
Current-Collector(Ic)(Max):
80 A
Current-CollectorPulsed(Icm):
225 A
Vce(on)(Max)@VgeIc:
2V @ 15V, 75A
Power-Max:
428 W
SwitchingEnergy:
4.5mJ
InputType:
Standard
GateCharge:
470 nC
Td(on/off)@25°C:
33ns/330ns
TestCondition:
400V, 75A, 5Ohm, 15V
ReverseRecoveryTime(trr):
121 ns
OperatingTemperature:
-40°C ~ 175°C (TJ)
MountingType:
Through Hole

IKW75N60TAFKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IKW75N60TAFKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IKW75N60TAFKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IKW75N60TAFKSA1 information

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IKW75N60TAFKSA1 Typical application Circuitry

The IKW75N60TAFKSA1 exhibits a blend of MOSFET and bipolar transistor technologies, encapsulating the advantages of high input impedance and low saturation voltage respectively. It's a crucial entity in high-efficiency, high-frequency applications, owing to its ability to swiftly switch high voltages with minimal loss.

1. Pin Configurations:

- Collector (C): Often, the collector (the middle pin in a typical TO-247 package) is interconnected with the power supply voltage, effectively channeling the current through the load when the IGBT is actuated.

- Gate (G): The gate pin is the command center, wherein applying a suitable gate-emitter voltage enables the flow of collector-emitter current.

- Emitter (E): This pin, typically interfaced with the circuit's ground, serves as the common reference for the gate drive and as the return path for the collector current.

2. Interfacing Protocols:

- Gate Driving: Affixing a gate-driving circuit (e.g., a gate driver IC or transistor) to the Gate pin, designers orchestrate the IKW75N60TAFKSA1's actuation, ensuring that the IGBT effectively transitions between its on and off states.

- Freewheeling Diode: Often, an antiparallel diode is coupled across the Collector and Emitter, safeguarding the IKW75N60TAFKSA1 during the off-phase, especially when inductive loads are present.

3. Cooling Mechanisms: Effective heat dissipation mechanisms, like heat sinks or cooling fans, might be paramount, given that the IKW75N60TAFKSA1 can handle significant power levels. It is critical for the device's lifetime and dependability to function within its defined heat settings.

4. Gate-Emitter Voltage (Vge): Adhering to the specified Vge ensures optimal performance while safeguarding the IKW75N60TAFKSA1 against potential breakdowns.

5. Collector-Emitter Voltage (Vce): Observing the Vce max parameter, a decisive factor outlined in the datasheet, is pivotal to prevent the IKW75N60TAFKSA1 from venturing into unsafe operational territories.

6. Current Handling: Ensuring that the operational current (both continuous and pulsed) remains within the delineated boundaries is vital to uphold the integrity of the IKW75N60TAFKSA1.

In conclusion, the IKW75N60TAFKSA1 elevates itself as a significant figure in the panorama of high-frequency, high-efficiency applications, offering a seamless conduit for engineers to sculpt effective power management and regulation circuits. A meticulous perusal of its datasheet will provide an enriched understanding, arming designers with the precise knowledge to adeptly maneuver through the realms of IGBT-based circuit design.

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6. What is the process for return or replacement of IKW75N60TAFKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IKW75N60TAFKSA1 we delivered, we will accept the replacement or return of the IKW75N60TAFKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IKW75N60TAFKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations