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Name: IKW50N65EH5XKSA1
Brand: Infineon Technologies
SKU: IKW50N65EH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IKW50N65EH5XKSA1

Part No.:: IKW50N65EH5XKSA1

Manufacturer:: Infineon Technologies

Package:: TO-247-3

Datasheet:: IKW50N65EH5XKSA1.pdf

Description:: IGBT TRENCH 650V 80A TO247-3

In Stock:: 2972

Quantity:: Add To Cart

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IKW50N65EH5XKSA1 Specifications

Packaging:
Tube
Series:
TrenchStop™
ProductStatus:
Active
IGBTType:
Trench
Voltage-CollectorEmitterBreakdown(Max):
650 V
Current-Collector(Ic)(Max):
80 A
Current-CollectorPulsed(Icm):
200 A
Vce(on)(Max)@VgeIc:
2.1V @ 15V, 50A
Power-Max:
275 W
SwitchingEnergy:
1.5mJ (on), 500µJ (off)
InputType:
Standard
GateCharge:
120 nC
Td(on/off)@25°C:
25ns/172ns
TestCondition:
400V, 50A, 12Ohm, 15V
ReverseRecoveryTime(trr):
81 ns
OperatingTemperature:
-40°C ~ 175°C (TJ)
MountingType:
Through Hole

IKW50N65EH5XKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IKW50N65EH5XKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IKW50N65EH5XKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IKW50N65EH5XKSA1 information

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IKW50N65EH5XKSA1 Typical application Circuitry

IKW50N65EH5XKSA1

IKW50N65EH5XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power conversion and control in high-voltage applications.

Application Scenarios

IKW50N65EH5XKSA1 is widely used in applications such as inverter systems for renewable energy sources, motor drives, high-efficiency power supplies, and induction heating systems, where high efficiency, reliability, and performance are critical.

Parameter Features

- High Blocking Voltage: Capable of handling voltages up to 650V, suitable for high-voltage applications.

- Low On-State Voltage: Ensures high efficiency by minimizing conduction losses.

- High Current Rating: This rating enables it to manage high currents, making high-power applications suitable for it.

- Fast Switching Speed: Offers fast switching characteristics, reducing switching losses and improving performance in high-frequency applications.

Circuit Connection in a Motor Drive Application

In a motor drive application, the IKW50N65EH5XKSA1 can be used in the inverter stage to control the speed and torque of the motor. Here's a detailed connection guide:

- DC Link Connection: Connect the positive terminal of the DC link to the collector (C, pin 2) of the IKW50N65EH5XKSA1. The DC link's negative terminal is connected to the IGBT's emitter (E, pin 1).

- Gate Drive Circuitry: The gate (G, pin 3) of the IKW50N65EH5XKSA1 requires a gate drive circuit capable of providing the appropriate gate voltage and current to switch the IGBT on and off efficiently. This includes the use of a gate resistor to control the gate charging and discharging rates.

- Motor Connection: The motor phases are connected to the collectors of the IKW50N65EH5XKSA1 IGBTs in the inverter circuit. Typically, a three-phase inverter uses six IGBTs to control a three-phase motor. - Protection Circuitry: Implement overcurrent, overvoltage, and short-circuit protection circuits to protect the IKW50N65EH5XKSA1 and the motor drive system. This may include the use of desaturation detection, fault feedback mechanisms, and snubber circuits to manage voltage spikes.

- Cooling System: Due to the power dissipation in the IKW50N65EH5XKSA1 during operation, an effective cooling system, such as a heatsink or liquid cooling, is essential to maintain the IGBT within its thermal limits and ensure reliability.

Design-Related Issues

When creating circuits with IKW50N65EH5XKSA1, there are a few things to take into account:

- Gate Drive Voltage: To protect the gate oxide layer and guarantee dependable operation, make sure the gate drive voltage for the IKW50N65EH5XKSA1 is within the designated range.

- Switching Frequency: Choose an appropriate switching frequency that balances efficiency and performance, considering the IKW50N65EH5XKSA1's fast switching capabilities while managing switching losses.

- Parasitic Inductances: Minimize parasitic inductances in the circuit layout to reduce the risk of oscillations and ensure stable operation of the IKW50N65EH5XKSA1.

- Thermal Management: Develop an effective thermal management strategy to dissipate heat generated by the IKW50N65EH5XKSA1 and maintain performance and reliability.

Integrating IKW50N65EH5XKSA1 into a motor drive system involves careful consideration of the gate drive requirements, protection mechanisms, circuit layout, and thermal management to leverage the IGBT's capabilities for efficient and reliable motor control.

IKW50N65EH5XKSA1 FAQ

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6. What is the process for return or replacement of IKW50N65EH5XKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IKW50N65EH5XKSA1 we delivered, we will accept the replacement or return of the IKW50N65EH5XKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IKW50N65EH5XKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations