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Name: IKW40N65H5AXKSA1
Brand: Infineon Technologies
SKU: IKW40N65H5AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IKW40N65H5AXKSA1

Part No.:: IKW40N65H5AXKSA1

Manufacturer:: Infineon Technologies

Package:: TO-247-3

Datasheet:: IKW40N65H5AXKSA1.pdf

Description:: IGBT 650V 74A 255W PG-TO247-3

In Stock:: 2964

Quantity:: Add To Cart

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IKW40N65H5AXKSA1 Specifications

Packaging:
Tube
Series:
Automotive, AEC-Q101, TrenchStop™
ProductStatus:
Obsolete
IGBTType:
Trench
Voltage-CollectorEmitterBreakdown(Max):
650 V
Current-Collector(Ic)(Max):
74 A
Current-CollectorPulsed(Icm):
120 A
Vce(on)(Max)@VgeIc:
2.1V @ 15V, 40A
Power-Max:
250 W
SwitchingEnergy:
380µJ (on), 120µJ (off)
InputType:
Standard
GateCharge:
92 nC
Td(on/off)@25°C:
20ns/153ns
TestCondition:
400V, 20A, 15Ohm, 15V
ReverseRecoveryTime(trr):
75 ns
OperatingTemperature:
-40°C ~ 175°C (TJ)
MountingType:
Through Hole

IKW40N65H5AXKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IKW40N65H5AXKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IKW40N65H5AXKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IKW40N65H5AXKSA1 information

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IKW40N65H5AXKSA1 Typical application Circuitry

The IKW40N65H5AXKSA1 is part of Infineon's HighSpeed 5 (H5) series within the IGBT (Insulated Gate Bipolar Transistor) portfolio, known for its exceptional efficiency and performance in high-voltage, high-speed switching applications. The H5 series is designed to bridge the gap between low loss and high switching speed requirements, making it suitable for a wide range of applications, including energy conversion, motor drives, and power management in both industrial and consumer electronics.

1. HighSpeed 5 Series Characteristics (Optimized Performance): The IKW40N65H5AXKSA1, as a member of the HighSpeed 5 series, is engineered to offer an optimal balance between low conduction losses and fast switching speeds. This IGBT is characterized by its low on-state voltage drop (V_CE(sat)) and minimal switching losses, enhancing the overall efficiency in high-frequency switching applications.

2. Circuit Integration (IGBT Configuration): The IKW40N65H5AXKSA1 is a single N-channel IGBT, typically used in configurations where high efficiency and fast switching are required. It features three primary terminals: the Gate (G), the Collector (C), and the Emitter (E). In a typical application, the Collector is connected to the high-voltage supply, the Emitter is connected to the load or ground, and the Gate is driven by a PWM signal or gate driver to control the IGBT's conduction and switching.

3. Gate Drive Considerations (Effective Control): The Gate (G) terminal is crucial for controlling the IKW40N65H5AXKSA1's operation. A suitable gate drive circuit, providing a voltage within the specified V_GE range, is essential to turn the IGBT on and off efficiently. This involves carefully managing the gate drive strength to ensure fast switching without causing excessive electromagnetic interference (EMI) or overstressing the device.

4. Power Supply and Load Connections (Stable Operation): The Collector (C) terminal should be connected to the positive side of the power supply, and the Emitter (E) terminal should be connected to the load and then to the ground. This configuration allows the IKW40N65H5AXKSA1 to control the current flow through the load when the IGBT is turned on.

5. Thermal Management (Ensuring Reliability): Given the power levels handled by the IKW40N65H5AXKSA1, effective thermal management is crucial. This may involve using heat sinks, thermal pads, and ensuring adequate PCB layout for heat dissipation to maintain the IGBT within its safe operating temperature range and ensure long-term reliability.

6. Protection Features (Device Safety): The IKW40N65H5AXKSA1 includes built-in features such as over-temperature protection and short-circuit protection, enhancing the safety and durability of the device and the overall system.

7. Device Packaging (Robust Construction): The IKW40N65H5AXKSA1 is available in a TO-247 package, known for its robust construction and ability to handle high current levels. This package also facilitates efficient thermal dissipation and straightforward mounting on heat sinks.

Integrating the IKW40N65H5AXKSA1 into electronic designs involves careful attention to the gate drive circuit, power supply and load connections, and thermal management considerations. By effectively managing these aspects and leveraging the IGBT's optimized performance characteristics, designers can utilize the IKW40N65H5AXKSA1 to achieve high efficiency and reliability in various high-voltage, high-speed switching applications.

IKW40N65H5AXKSA1 FAQ

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6. What is the process for return or replacement of IKW40N65H5AXKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IKW40N65H5AXKSA1 we delivered, we will accept the replacement or return of the IKW40N65H5AXKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IKW40N65H5AXKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations