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Name: HGTP10N120BN
Brand: ON Semiconductor
SKU: HGTP10N120BN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor HGTP10N120BN

Part No.:: HGTP10N120BN

Manufacturer:: ON Semiconductor

Package:: TO-220-3

Datasheet:: HGTP10N120BN.pdf

Description:: IGBT 1200V 35A 298W TO220AB

In Stock:: 2130

Quantity:: Add To Cart

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HGTP10N120BN Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Last Time Buy
IGBTType:
NPT
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
35 A
Current-CollectorPulsed(Icm):
80 A
Vce(on)(Max)@VgeIc:
2.7V @ 15V, 10A
Power-Max:
298 W
SwitchingEnergy:
320µJ (on), 800µJ (off)
InputType:
Standard
GateCharge:
100 nC
Td(on/off)@25°C:
23ns/165ns
TestCondition:
960V, 10A, 10Ohm, 15V
ReverseRecoveryTime(trr):
-
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

HGTP10N120BN this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including HGTP10N120BN price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for HGTP10N120BN to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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HGTP10N120BN information

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HGTP10N120BN Typical application Circuitry

HGTP10N120BN

The HGTP10N120BN is a sophisticated IGBT (Insulated Gate Bipolar Transistor) developed by Fairchild Semiconductor, a component recognized for its high efficiency and fast switching capabilities. It's part of a series that's designed to enhance the performance of a wide array of high-voltage and high-speed switching applications, including but not limited to inverters, converters, and motor drives in both industrial and consumer electronics.

1. Operational Voltage and Electrical Connection Insights: The HGTP10N120BN is tailored for a collector-emitter voltage rating of 1200V, indicating its suitability for high-voltage applications. It typically operates with a gate drive voltage in the range of 15V to 20V, which is essential for fully activating the IGBT and achieving optimal performance. This device requires a stable and clean power supply to function within its best parameters, emphasizing the need for precise power management within the circuit design.

2. Pin Layout and Effective Integration Strategy: This IGBT features a standard three-pin configuration found in power transistors, which includes the Collector (C), Emitter (E), and Gate (G). The collector is connected to the high-voltage side of the circuit, the emitter serves as the return path or ground in most configurations, and the gate is the control terminal where the input signal is applied. Accurate and secure wiring to these pins, following the recommended practices, is crucial for leveraging the full capabilities of the HGTP10N120BN and ensuring efficient operation.

3. PCB Design for Enhanced Device Performance: Integrating the HGTP10N120BN into a printed circuit board (PCB) demands meticulous planning to preserve signal integrity and facilitate effective heat dissipation. Design considerations should include employing thick traces for the collector and emitter paths to handle high currents, designing an effective layout for heat dissipation-potentially including heat sinks or thermal pads-and considering snubber circuits to protect the IGBT from voltage spikes and oscillations.

4. Advanced Thermal Management Techniques: Given the HGTP10N120BN's capacity for high-speed switching and high power, effective thermal management is pivotal. Techniques such as mounting the IGBT on a heat sink, ensuring good thermal contact, and possibly using active cooling methods are recommended to maintain the device within its safe operating temperature range. This not only extends the lifespan of the IGBT but also maintains consistent performance under varying operational conditions.

5. Circuit Optimization for Superior Performance: To fully harness the capabilities of the HGTP10N120BN in demanding applications, the circuit design should be optimized for minimal switching losses and maximum efficiency. This includes selecting appropriate gate drive circuitry to ensure fast and reliable switching, implementing current sensing for overcurrent protection, and accurately designing the dead-time between turn-on and turn-off to prevent shoot-through. These considerations are vital for achieving high performance and reliability.

6. Deployment of HGTP10N120BN in High-Efficiency Systems: The HGTP10N120BN's exceptional characteristics make it a prime choice for developing high-efficiency power systems that require efficient, high-speed switching. Through comprehensive system design that addresses the IGBT's electrical and thermal properties, designers can significantly improve the performance of power conversion systems, enabling advanced solutions for renewable energy, automotive, and industrial applications.

The HGTP10N120BN exemplifies Fairchild Semiconductor's expertise in power semiconductor technology, offering an efficient and reliable solution for managing high-voltage, high-speed switching applications. Its integration into electronic systems, marked by strategic planning in power management, pin connectivity, PCB layout, and thermal management, underlines its significant role in pushing the boundaries of power electronics across a wide spectrum of applications.

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6. What is the process for return or replacement of HGTP10N120BN?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HGTP10N120BN.

(3)The PartNo is unused and only in the original unpacked packaging.

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