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Name: HGTG27N120BN
Brand: Fairchild Semiconductor
SKU: HGTG27N120BN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Fairchild Semiconductor HGTG27N120BN

Part No.:: HGTG27N120BN

Manufacturer:: Fairchild Semiconductor

Package:: TO-247-3

Datasheet:: HGTG27N120BN.pdf

Description:: INSULATED GATE BIPOLAR TRANSISTO

In Stock:: 3429

Quantity:: Add To Cart

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HGTG27N120BN Specifications

Packaging:
Bulk
Series:
-
ProductStatus:
Active
IGBTType:
NPT
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
72 A
Current-CollectorPulsed(Icm):
216 A
Vce(on)(Max)@VgeIc:
2.7V @ 15V, 27A
Power-Max:
500 W
SwitchingEnergy:
2.2mJ (on), 2.3mJ (off)
InputType:
Standard
GateCharge:
270 nC
Td(on/off)@25°C:
24ns/195ns
TestCondition:
960V, 27A, 3Ohm, 15V
ReverseRecoveryTime(trr):
-
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

HGTG27N120BN this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including HGTG27N120BN price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for HGTG27N120BN to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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HGTG27N120BN information

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HGTG27N120BN Typical application Circuitry

The HGTG27N120BN is a high-performance IGBT (Insulated Gate Bipolar Transistor) from Fairchild Semiconductor, now part of ON Semiconductor, designed for efficiency in high-speed switching applications. This device is tailored for demanding environments where power efficiency and reliability are paramount. It is commonly utilized in applications such as inverters, converters, UPS systems, and motor drives, making it a versatile component in both industrial and consumer electronics.

1. Voltage and Power Supply Specifications: The HGTG27N120BN is capable of handling high voltages, with a collector-emitter voltage rating of 1200V, making it well-suited for high-voltage applications. It operates within a power supply environment that typically requires careful consideration of voltage ratings to ensure the device functions within its optimal parameters. A stable and appropriate power supply, usually around 15V for the gate drive voltage, is crucial to activate the IGBT, highlighting the importance of a well-designed power management system in the circuit.

2. Pin Configuration and Connectivity Overview: This IGBT features a conventional three-pin configuration found in power transistors, which includes the Collector (C), Emitter (E), and Gate (G). The collector is connected to the load, the emitter serves as the reference point or ground in most applications, and the gate is the control terminal where the input signal is applied to switch the device on or off. Ensuring precise and secure connections to these pins, in compliance with safety standards and device specifications, is essential for optimal operation and performance.

3. PCB Integration Techniques for Enhanced Performance: When integrating the HGTG27N120BN into a printed circuit board (PCB), attention must be paid to both the electrical layout and thermal management to enhance the device's performance and durability. It's advisable to provide adequate trace widths to handle the current without excessive heating and to incorporate heat sinks or thermal vias when necessary to effectively dissipate heat generated by the device. Implementing snubber circuits can also protect the IGBT from voltage spikes during high-speed switching.

4. Effective Thermal Management Strategies: The HGTG27N120BN, designed for high-speed switching, can generate significant heat under operation. Employing efficient thermal management techniques, such as heat sinks, thermal pads, or even active cooling systems, depending on the application's thermal load, is critical. This ensures the IGBT operates within its thermal limits, thereby extending its lifespan and maintaining consistent performance.

5. Circuit Design Considerations for Optimal Use: Maximizing the HGTG27N120BN's capabilities in high-performance applications involves careful circuit design. This includes the use of appropriate gate drive circuits to ensure fast and reliable switching, designing with parasitic inductances and capacitances in mind to minimize switching losses, and incorporating protection features against overcurrent and short-circuit conditions. Such considerations are vital for leveraging the full potential of the IGBT in demanding applications.

6. Incorporating the HGTG27N120BN in Advanced Power Systems: The advanced capabilities of the HGTG27N120BN make it an ideal choice for sophisticated power systems that require efficient, high-speed switching. Through meticulous design that addresses the IGBT's electrical and thermal characteristics, this component can significantly enhance the performance of power conversion systems. This facilitates the development of reliable and efficient solutions for a broad range of applications, from renewable energy systems to electric vehicle powertrains.

The HGTG27N120BN exemplifies the advanced engineering in semiconductor technology for power conversion, offering efficient switching, high voltage capability, and reliability. Its integration into electronic systems, marked by strategic planning in power supply management, pin connectivity, PCB layout, and thermal management, underscores its significant role in enabling high-performance power electronics in various applications.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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