HGTG11N120CND

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onsemi HGTG11N120CND

Part No.:
HGTG11N120CND
Manufacturer:
onsemi
Package:
TO-247-3
Datasheet:
HGTG11N120CND.pdf
Description:
IGBT NPT 1200V 43A TO247-3
In Stock:
378
Quantity:
  Add To Cart
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  • Purchase and inquiryPurchase and inquiry

    HGTG11N120CND this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including HGTG11N120CND price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for HGTG11N120CND to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    HGTG11N120CND Typical application Circuitry


    The HGTG11N120CND belongs to a series of high voltage, high-speed IGBTs (Insulated Gate Bipolar Transistors). These IGBTs are designed to provide a perfect balance between low conduction losses and fast switching speeds, making them ideal for high-efficiency, high-frequency applications.

    1. Collector (C): This is the main current-carrying terminal. In most power applications, the collector is connected to the positive supply rail, especially in configurations like motor drives or inverters.

    2. Gate (G): This terminal controls the IGBT. Apply a positive voltage (usually between 12V to 15V) to turn ON the HGTG11N120CND and 0V to turn it OFF. It's crucial to ensure that the gate voltage never exceeds the maximum specified limit to prevent damage. Using a gate resistor can control the switching speeds and mitigate any oscillations.

    3. Emitter (E): This terminal is usually connected to the circuit's ground or a common point in half-bridge and full-bridge configurations. Current exits the device through this pin when the IGBT is in the ON state.

    4. Best Practices:

    - When driving the HGTG11N120CND gate, using a gate driver circuit can provide better control, protection, and faster switching.

    - Ensure that a free-wheeling diode (also known as a flyback diode) is placed across loads that have inductive characteristics.

    - A proper heat sink is essential, especially in high-power applications, to dissipate the generated heat effectively.

    In conclusion, the HGTG11N120CND stands out as a premier IGBT, adept for applications necessitating efficient switching and high power. While this guide provides a foundational understanding and connection strategy for the HGTG11N120CND, it's always recommended to consult the device's official datasheet for a more exhaustive understanding and any specific nuances related to the device.

    HGTG11N120CND informationHGTG11N120CND information

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    6. What is the process for return or replacement of HGTG11N120CND?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HGTG11N120CND we delivered, we will accept the replacement or return of the HGTG11N120CND only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of HGTG11N120CND.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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