What is the Additional Feature ?

Name: HGT1S10N120BNST
Brand: onsemi
SKU: HGT1S10N120BNST
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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onsemi HGT1S10N120BNST

Part No.:: HGT1S10N120BNST

Manufacturer:: onsemi

Package:: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Datasheet:: HGT1S10N120BNST.pdf

Description:: IGBT 1200V 35A 298W TO263AB

In Stock:: 2041

Quantity:: Add To Cart

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HGT1S10N120BNST Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
IGBTType:
NPT
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
35 A
Current-CollectorPulsed(Icm):
80 A
Vce(on)(Max)@VgeIc:
2.7V @ 15V, 10A
Power-Max:
298 W
SwitchingEnergy:
320µJ (on), 800µJ (off)
InputType:
Standard
GateCharge:
100 nC
Td(on/off)@25°C:
23ns/165ns
TestCondition:
960V, 10A, 10Ohm, 15V
ReverseRecoveryTime(trr):
-
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

HGT1S10N120BNST this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including HGT1S10N120BNST price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for HGT1S10N120BNST to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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HGT1S10N120BNST information

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HGT1S10N120BNST Typical application Circuitry

The HGT1S10N120BNST belongs to a family of IGBTs characterized by their capacity for high voltage and current. These devices, with the aid of their insulated gates, make them ideal for applications demanding high efficiency and fast switching. IGBTs marry the advantages of MOSFETs and bipolar transistors, giving them a significant edge in power electronics.

1. Pin Configuration:

- Collector (C): This pin is the main current-carrying terminal and is generally connected to the positive supply.

- Emitter (E): Analogous to the source in a MOSFET or the emitter in a BJT, it's the terminal through which the current exits the transistor.

- Gate (G): The IGBT is controlled by the gate. A positive voltage applied to the gate with respect to the emitter turns the device on, while a 0V (or negative voltage) turns the device off.

2. Circuit Connection:

- Connect the Collector to the positive terminal of the load, and the other terminal of the load to the positive side of the power supply.

- Normally, the Emitter is connected directly to the ground or the power source's negative side.

- The Gate is where you apply control voltage. By using a PWM (Pulse Width Modulation) signal, you can control the on/off periods of the IGBT, allowing you to regulate the power to the load. A gate resistor, connected between the PWM source and the Gate, can be used to prevent oscillations and to control the turn-on and turn-off speeds.

3. Key Notes:

- Ensure you use appropriate gate drive circuits when interfacing with microcontrollers or other low-power logic devices.

- Always refer to the datasheet of the HGT1S10N120BNST for specific voltage and current ratings to avoid damaging the component.

- It's essential to have a freewheeling diode when driving inductive loads to prevent voltage spikes which can harm the IGBT.

In essence, the HGT1S10N120BNST, as part of the IGBT family, offers a blend of efficiency and performance in high-power applications. Its unique combination of features renders it invaluable in an array of power electronic designs. Always ensure to follow best practices and consult the datasheet when integrating it into your projects.

HGT1S10N120BNST FAQ

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3. Are the HGT1S10N120BNST price and inventory displayed accurate?

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6. What is the process for return or replacement of HGT1S10N120BNST?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HGT1S10N120BNST we delivered, we will accept the replacement or return of the HGT1S10N120BNST only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HGT1S10N120BNST.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations