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Name: HGT1S10N120BNS
Brand: onsemi
SKU: HGT1S10N120BNS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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onsemi HGT1S10N120BNS

Part No.:: HGT1S10N120BNS

Manufacturer:: onsemi

Package:: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Datasheet:: HGT1S10N120BNS.pdf

Description:: IGBT 1200V 35A 298W TO263AB

In Stock:: 2138

Quantity:: Add To Cart

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HGT1S10N120BNS Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Last Time Buy
IGBTType:
NPT
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
35 A
Current-CollectorPulsed(Icm):
80 A
Vce(on)(Max)@VgeIc:
2.7V @ 15V, 10A
Power-Max:
298 W
SwitchingEnergy:
320µJ (on), 800µJ (off)
InputType:
Standard
GateCharge:
100 nC
Td(on/off)@25°C:
23ns/165ns
TestCondition:
960V, 10A, 10Ohm, 15V
ReverseRecoveryTime(trr):
-
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

HGT1S10N120BNS this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including HGT1S10N120BNS price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for HGT1S10N120BNS to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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HGT1S10N120BNS information

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HGT1S10N120BNS Typical application Circuitry

The HGT1S10N120BNS belongs to a series of IGBTs optimized for applications that require high power efficiency, robust performance, and reliable switching. With its insulated gate design, this series offers low gate drive requirements, minimizing switching losses and enhancing power efficiency.

1. Pin Configuration:

- Collector (C): The main terminal for carrying current is this one. In typical applications, it gets connected to the positive side of the high-power circuit or load.

- Gate (G): This pin controls the IGBT. The IGBT may be switched on or off by supplying a voltage to this pin (relative to the Emitter). Care should be taken to ensure that gate voltage specifications are not exceeded to prevent damage.

- Emitter (E): This is the reference and return path for both the gate and collector currents. In most applications, this pin gets connected to the system ground or the negative side of the high-power circuit.

2. Circuit Connection Guidelines:

- Connect the Collector to the positive terminal of the load or high-power circuit.

- The control terminal is the Gate pin. Use a gate drive circuit to deliver the necessary voltage to switch the IGBT on or off. Ensure that a gate resistor is in place to control the inrush current and protect the IGBT.

- Establish a firm connection of the Emitter to the system ground or the negative terminal of the high-power circuit.

- When designing the drive circuitry for the HGT1S10N120BNS, it's crucial to consider a protection mechanism like a zener diode to prevent over-voltage conditions on the gate.

- For effective switching and to prevent unwanted oscillations, keep the gate drive traces as short as possible.

The HGT1S10N120BNS stands as a testament to the advancements in power electronic devices, ensuring high efficiency, faster switching, and reliable performance. Whether you're designing power inverters, motor drives, or other high-power systems, this IGBT can be an invaluable component. Always refer to the official datasheet for the most detailed specifications and recommendations, ensuring the longevity and optimal performance of the device.

HGT1S10N120BNS FAQ

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3. Are the HGT1S10N120BNS price and inventory displayed accurate?

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6. What is the process for return or replacement of HGT1S10N120BNS?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HGT1S10N120BNS we delivered, we will accept the replacement or return of the HGT1S10N120BNS only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HGT1S10N120BNS.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations