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Name: FGY75T120SQDN
Brand: ON Semiconductor
SKU: FGY75T120SQDN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor FGY75T120SQDN

Part No.:: FGY75T120SQDN

Manufacturer:: ON Semiconductor

Package:: TO-247-3 Variant

Datasheet:: FGY75T120SQDN.pdf

Description:: IGBT 1200V 75A UFS

In Stock:: 2980

Quantity:: Add To Cart

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FGY75T120SQDN Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
IGBTType:
Field Stop
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
150 A
Current-CollectorPulsed(Icm):
300 A
Vce(on)(Max)@VgeIc:
1.95V @ 15V, 75A
Power-Max:
790 W
SwitchingEnergy:
6.25mJ (on), 1.96mJ (off)
InputType:
Standard
GateCharge:
399 nC
Td(on/off)@25°C:
64ns/332ns
TestCondition:
600V, 75A, 10Ohm, 15V
ReverseRecoveryTime(trr):
99 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

FGY75T120SQDN this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FGY75T120SQDN price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FGY75T120SQDN to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FGY75T120SQDN information

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FGY75T120SQDN Typical application Circuitry

FGY75T120SQDN

The FGY75T120SQDN is a high-performance IGBT (Insulated Gate Bipolar Transistor) module crafted by ON Semiconductor, belonging to a lineup renowned for its efficiency and reliability in handling power. This particular model is engineered to meet the rigorous demands of advanced power conversion systems, making it an ideal component for applications ranging from renewable energy inverters and electric vehicle charging stations to industrial motor drives. The FGY75T120SQDN exemplifies ON Semiconductor's commitment to providing innovative power management solutions that enhance system performance while minimizing energy loss.

1. Voltage Adaptability and Power Supply Compatibility: Designed for high-voltage applications, the FGY75T120SQDN operates effectively with collector-emitter voltages up to 1200V. This feature ensures the IGBT's compatibility with a wide range of power systems, facilitating its integration into various high-voltage power conversion tasks. It is optimized for use with power supplies that can deliver these voltage levels, enabling the FGY75T120SQDN to maintain optimal performance across diverse electrical environments.

2. Precise Connection Methodology and Pin Configuration: The FGY75T120SQDN is encased in a robust TO-247 package, incorporating three crucial terminals for its operation: the Gate (G), Collector (C), and Emitter (E). The Gate terminal is where the control signal is applied, governing the IGBT's conduction state. The Collector terminal is connected to the high-voltage power supply, facilitating the flow of current through the device, while the Emitter terminal is linked to the load or circuit ground. Accurate and secure connections to these terminals are essential for harnessing the full potential of the FGY75T120SQDN in power electronics circuits.

3. System Efficiency Enhancement through Strategic Connectivity: Efficiently integrating the FGY75T120SQDN into power systems demands careful circuit design to ensure peak efficiency and reliability. Key to this process is optimizing the gate drive circuit for precise control over the IGBT's rapid switching behavior, minimizing resistance and inductance in the connections to and from the IGBT, and ensuring the power supply voltage is appropriately matched with the device's specifications to prevent overvoltage stress and optimize device performance.

4. Advanced Thermal Management for Peak Performance: Effective thermal management is critical for maintaining the FGY75T120SQDN's performance and longevity. While the TO-247 package aids in heat dissipation, additional cooling measures such as heatsinks or liquid cooling systems might be necessary to manage thermal loads effectively in high-power applications. Implementing thermal monitoring and protective measures can mitigate the risk of thermal overload, ensuring the IGBT operates within safe temperature ranges.

5. Circuit Design Considerations for Optimal Functionality: The successful integration of the FGY75T120SQDN into a power management system requires meticulous planning and design. This includes employing snubber circuits to protect against voltage transients, choosing capacitors and inductors that complement the device's switching characteristics, and designing a PCB layout that minimizes electromagnetic interference while optimizing thermal management. A well-executed circuit design will exploit the FGY75T120SQDN's fast switching and high efficiency, resulting in superior performance in power conversion applications.

6. Component Selection for System Design Enhancement: Achieving optimal performance with the FGY75T120SQDN involves a comprehensive approach to selecting complementary components. This includes selecting gate drivers with adequate drive strength, precision capacitors for effective filtering, and suitable inductors to ensure smooth current flow. The careful selection of these components is crucial for enhancing the system's overall efficiency, performance, and durability, highlighting the importance of an integrated design approach.

In conclusion, the FGY75T120SQDN from ON Semiconductor stands as a testament to the advancements in IGBT technology, offering unparalleled efficiency, robustness, and reliability for handling high-voltage, high-power applications. Its sophisticated electrical characteristics, combined with strategic connectivity, advanced thermal management practices, and comprehensive circuit design considerations, make it an indispensable component for advancing power management solutions across various industrial and energy domains.

FGY75T120SQDN FAQ

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6. What is the process for return or replacement of FGY75T120SQDN?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FGY75T120SQDN we delivered, we will accept the replacement or return of the FGY75T120SQDN only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FGY75T120SQDN.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations