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Name: FGY60T120SQDN
Brand: ON Semiconductor
SKU: FGY60T120SQDN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FGY60T120SQDN

Part No.:: FGY60T120SQDN

Manufacturer:: ON Semiconductor

Package:: TO-247-3 Variant

Datasheet:: FGY60T120SQDN.pdf

Description:: IGBT 1200V 60A UFS

In Stock:: 3079

Quantity:: Add To Cart

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FGY60T120SQDN Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
IGBTType:
-
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
120 A
Current-CollectorPulsed(Icm):
240 A
Vce(on)(Max)@VgeIc:
1.95V @ 15V, 60A
Power-Max:
517 W
SwitchingEnergy:
-
InputType:
Standard
GateCharge:
311 nC
Td(on/off)@25°C:
52ns/296ns
TestCondition:
600V, 60A, 10Ohm, 15V
ReverseRecoveryTime(trr):
-
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

FGY60T120SQDN this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FGY60T120SQDN price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FGY60T120SQDN to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FGY60T120SQDN information

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FGY60T120SQDN Typical application Circuitry

FGY60T120SQDN

The FGY60T120SQDN is a prominent IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, distinguished for its integration into systems requiring high efficiency, durability, and speed in power conversion and management. This device is part of a series designed to meet the stringent demands of modern electronic applications, including renewable energy inverters, motor drives, and power conditioning systems. The FGY60T120SQDN embodies ON Semiconductor's commitment to innovation in semiconductor technology, providing a solution that significantly enhances system performance and energy efficiency.

1. Operational Voltage Specifications and Power Supply Configuration: The FGY60T120SQDN is designed for high-voltage operations, with a collector-emitter voltage rating of 1200V. This characteristic underscores its capability to seamlessly function within power systems that operate at elevated voltage levels, ensuring efficient performance across various power conversion tasks. The device is optimized for compatibility with power supplies that can accommodate this voltage range, enabling straightforward integration into diverse electrical environments.

2. Detailed Connectivity Approach and Pin Configuration: Encapsulated in a robust package, the FGY60T120SQDN features three primary terminals essential for its functionality: the Collector (C), Emitter (E), and Gate (G). The Collector terminal is intended for connection to the high-voltage supply, acting as the conduit for current flow when the IGBT is conducting. The Emitter terminal, typically linked to the load or circuit ground, and the Gate terminal, where the control signal is applied, together facilitate precise modulation of the IGBT's operation. Ensuring accurate and reliable connections to these terminals is crucial for maximizing the FGY60T120SQDN's efficiency and performance in power electronic circuits.

3. Enhancing System Efficiency Through Strategic Connectivity: Incorporating the FGY60T120SQDN into power systems requires a meticulous approach to circuit design to ensure maximum efficiency and reliability. Optimizing the gate drive circuit for precise control over the IGBT's switching behavior, minimizing resistance and inductance in the connections between the IGBT and other circuit components, and aligning the power supply voltage with the device's operational specifications are essential steps in optimizing performance and preventing overvoltage stress.

4. Advanced Thermal Management for Sustained Performance: Maintaining optimal thermal conditions is vital for preserving the FGY60T120SQDN's efficiency and extending its lifespan. While the device's package is designed to facilitate heat dissipation, additional cooling measures, such as heatsinks or liquid cooling systems, may be necessary to manage thermal loads effectively in high-power applications. Implementing thermal monitoring and incorporating protective measures can help prevent thermal overload, ensuring the IGBT operates within safe temperature limits.

5. Circuit Design Principles for Superior Functionality: Proper integration of the FGY60T120SQDN into a power management system involves careful planning and circuit design. This includes employing snubber circuits to protect against voltage spikes, selecting compatible capacitors and inductors to complement the device's switching characteristics, and designing a PCB layout that minimizes electromagnetic interference while optimizing thermal management. A well-conceived circuit design will leverage the FGY60T120SQDN's fast switching and high efficiency, resulting in enhanced performance in power conversion applications.

6. Comprehensive Component Selection for System Optimization: Achieving optimal performance with the FGY60T120SQDN extends beyond the IGBT itself and requires a holistic approach to selecting complementary components. This involves choosing gate drivers with appropriate drive capabilities, precision capacitors for effective filtering, and suitable inductors to ensure smooth current delivery. Careful selection of these components is essential for enhancing the system's overall efficiency, performance, and durability, highlighting the importance of integrated system design.

In summary, the FGY60T120SQDN from ON Semiconductor represents a significant advancement in IGBT technology, offering exceptional efficiency, robustness, and reliability for handling high-voltage, high-power applications. Its sophisticated electrical characteristics, combined with strategic connectivity, advanced thermal management practices, and comprehensive circuit design considerations, make it an essential component for advancing power management solutions across a wide range of industrial and energy sectors.

FGY60T120SQDN FAQ

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3. Are the FGY60T120SQDN price and inventory displayed accurate?

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6. What is the process for return or replacement of FGY60T120SQDN?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FGY60T120SQDN we delivered, we will accept the replacement or return of the FGY60T120SQDN only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FGY60T120SQDN.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations