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Name: FGH75T65UPD
Brand: ON Semiconductor
SKU: FGH75T65UPD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FGH75T65UPD

Part No.:: FGH75T65UPD

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:

Description:: IGBT 650V 150A 375W TO-247AB

In Stock:: 2508

Quantity:: Add To Cart

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FGH75T65UPD Specifications

Packaging:
Bulk
Series:
-
ProductStatus:
Not For New Designs
IGBTType:
Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max):
650 V
Current-Collector(Ic)(Max):
150 A
Current-CollectorPulsed(Icm):
225 A
Vce(on)(Max)@VgeIc:
2.3V @ 15V, 75A
Power-Max:
375 W
SwitchingEnergy:
2.85mJ (on), 1.2mJ (off)
InputType:
Standard
GateCharge:
385 nC
Td(on/off)@25°C:
32ns/166ns
TestCondition:
400V, 75A, 3Ohm, 15V
ReverseRecoveryTime(trr):
85 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

FGH75T65UPD this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FGH75T65UPD price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FGH75T65UPD to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FGH75T65UPD information

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FGH75T65UPD Typical application Circuitry

FGH75T65UPD

The FGH75T65UPD is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, which is part of their comprehensive portfolio aimed at enhancing power efficiency across a wide range of applications. This device is specifically designed for high-efficiency, high-speed switching applications, making it an ideal component for sectors requiring advanced power management solutions, such as renewable energy systems, electric vehicles, and high-performance industrial machinery. The FGH75T65UPD stands out for its remarkable ability to handle high voltages and currents while maintaining low conduction and switching losses, thereby significantly improving the overall efficiency and reliability of power systems.

1. Voltage Compatibility and Power Supply Integration: The FGH75T65UPD is capable of operating at collector-emitter voltages up to 650V, showcasing its suitability for a broad array of applications that demand high voltage handling capabilities. This IGBT is optimized for compatibility with power supplies within this voltage range, facilitating its integration into various electrical environments and ensuring that it can perform optimally in diverse power conversion tasks.

2. Connection Methodology and Detailed Pin Configuration: The FGH75T65UPD is housed in a TO-247 package, featuring three essential terminals for operation: the Collector (C), Emitter (E), and Gate (G). The Collector terminal is designed to be connected to the positive side of the power supply, serving as the main pathway for current flow when the device is in the conducting state. The Emitter terminal is connected to the circuit ground or load, and the Gate terminal is where the control signal is applied, modulating the IGBT's conduction status. Precise and secure connectivity to these terminals is crucial for leveraging the full capabilities of the FGH75T65UPD in power electronics circuits.

3. Maximizing System Efficiency Through Strategic Connectivity: The effective incorporation of the FGH75T65UPD into power systems necessitates a meticulous approach to circuit design to ensure maximum efficiency and reliability. This involves optimizing the gate drive circuit for precise control over the IGBT's switching behavior, creating low-resistance and low-inductance pathways between the IGBT and other circuit components, and ensuring the power supply voltage is appropriately matched with the device's specifications to prevent overvoltage stress.

4. Thermal Management Solutions for Sustained Performance: Maintaining optimal thermal conditions is vital for preserving the FGH75T65UPD's performance and longevity. Although the TO-247 package aids in heat dissipation, high-power applications may require additional cooling strategies, such as heatsinks or liquid cooling systems, to effectively manage the thermal load. Implementing thermal monitoring and incorporating protective measures can mitigate the risk of thermal overload, ensuring the IGBT operates within safe temperature ranges.

5. Circuit Design Considerations for Optimal Functionality: Proper integration of the FGH75T65UPD into a power management system involves careful planning and circuit design. This includes employing snubber circuits to protect the IGBT from voltage spikes, selecting compatible capacitors and inductors to complement the device's switching characteristics, and designing a PCB layout that minimizes electromagnetic interference while optimizing thermal management. A thoughtfully designed circuit will exploit the FGH75T65UPD's rapid switching and high efficiency, leading to superior performance in power conversion applications.

6. Component Selection for System Design Enhancement: Achieving optimal performance with the FGH75T65UPD extends beyond the IGBT itself and requires a holistic approach to selecting complementary components. This involves choosing gate drivers that provide the correct drive strength, precision capacitors for effective filtering, and suitable inductors for smooth current flow. Careful selection of these components is essential for enhancing the efficiency, performance, and durability of the system, highlighting the importance of integrated system design.

In conclusion, the FGH75T65UPD from ON Semiconductor represents a significant advancement in IGBT technology, offering unmatched efficiency, robustness, and reliability for handling high-voltage, high-power applications. Its advanced electrical characteristics, combined with strategic connectivity, robust thermal management practices, and comprehensive circuit design considerations, make it an invaluable component for advancing power management solutions across various industrial and energy domains.

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6. What is the process for return or replacement of FGH75T65UPD?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FGH75T65UPD we delivered, we will accept the replacement or return of the FGH75T65UPD only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FGH75T65UPD.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations