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Name: FGH40T120SMD-F155
Brand: ON Semiconductor
SKU: FGH40T120SMD-F155
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor FGH40T120SMD-F155

Part No.:: FGH40T120SMD-F155

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:: FGH40T120SMD-F155.pdf

Description:: IGBT 1200V 80A 555W TO247-3

In Stock:: 3485

Quantity:: Add To Cart

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FGH40T120SMD-F155 Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
IGBTType:
Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
80 A
Current-CollectorPulsed(Icm):
160 A
Vce(on)(Max)@VgeIc:
2.4V @ 15V, 40A
Power-Max:
555 W
SwitchingEnergy:
2.7mJ (on), 1.1mJ (off)
InputType:
Standard
GateCharge:
370 nC
Td(on/off)@25°C:
40ns/475ns
TestCondition:
600V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr):
65 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

FGH40T120SMD-F155 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FGH40T120SMD-F155 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FGH40T120SMD-F155 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FGH40T120SMD-F155 information

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FGH40T120SMD-F155 Typical application Circuitry

FGH40T120SMD-F155

The FGH40T120SMD-F155 is a sophisticated IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, designed to excel in a variety of high-efficiency power conversion and control applications. This device is part of a series characterized by its ability to handle high voltages and currents with exceptional efficiency and speed, making it a prime choice for sectors such as renewable energy, automotive, and industrial motor drives. The FGH40T120SMD-F155 is engineered to combine the high-speed switching characteristics of MOSFETs with the high current and voltage handling capabilities of bipolar transistors, offering a solution that significantly enhances system performance and reliability.

1. Voltage Compatibility and Power Supply Integration: The FGH40T120SMD-F155 operates effectively at collector-emitter voltages up to 1200V, showcasing its adaptability in high-voltage applications. This capability ensures that the device can be seamlessly incorporated into power systems requiring robust voltage handling, thereby facilitating efficient power management across a spectrum of applications. The IGBT is designed for compatibility with power supplies within this voltage range, enabling straightforward integration into various electrical environments.

2. Comprehensive Connection Approach and Pin Configuration: Encapsulated in a TO-247 package, the FGH40T120SMD-F155 features three primary terminals: the Collector (C), Emitter (E), and Gate (G). The Collector terminal connects to the power supply's high-voltage side, the Emitter terminal links to the load or circuit ground, and the Gate terminal receives the control signal, dictating the IGBT's conduction state. Accurate and secure connections to these terminals are vital for harnessing the full capabilities of the FGH40T120SMD-F155 in power electronics applications.

3. Optimizing System Efficiency through Strategic Connectivity: Efficient integration of the FGH40T120SMD-F155 into power systems requires careful consideration of the circuit design to ensure maximum efficiency and reliability. This entails creating paths between the IGBT and other components with minimal resistance and inductance to enhance rapid and efficient switching. Additionally, optimizing the gate drive circuit to accurately control the IGBT's operation, in harmony with the system's power supply voltage, is essential for achieving optimal device performance.

4. Advanced Thermal Management Solutions: Effective thermal management is crucial for maintaining the FGH40T120SMD-F155's performance and longevity. Although the TO-247 package aids in dissipating heat, additional cooling measures, such as heatsinks or liquid cooling systems, may be necessary to effectively manage thermal loads in high-power applications. Implementing thermal monitoring and incorporating protective measures can prevent thermal overload, ensuring the IGBT operates within safe temperature limits.

5. Circuit Design Principles for Enhanced Functionality: Proper integration of the FGH40T120SMD-F155 into a power management system involves meticulous design and planning. This includes utilizing snubber circuits to mitigate voltage spikes, selecting capacitors and inductors that complement the device's switching characteristics, and designing a PCB layout that minimizes electromagnetic interference while optimizing thermal management. A well-considered circuit design will exploit the FGH40T120SMD-F155's fast switching and high efficiency, leading to superior performance in power conversion applications.

6. Component Selection for System Optimization: Achieving the best performance with the FGH40T120SMD-F155 extends beyond the IGBT itself, requiring a holistic approach to selecting complementary components. This includes choosing gate drivers with appropriate drive capabilities, precision capacitors for effective filtering, and suitable inductors for smooth current delivery. Careful selection of these components is critical for enhancing the efficiency, performance, and durability of the overall system, highlighting the importance of integrated system design.

In summary, the FGH40T120SMD-F155 from ON Semiconductor represents a significant advancement in IGBT technology, offering unmatched efficiency, robustness, and reliability for high-voltage, high-power applications. Its advanced electrical properties, combined with strategic connectivity, robust thermal management practices, and comprehensive circuit design considerations, make it a pivotal component for advancing power management solutions across various industrial and energy domains.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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