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Name: FGH25T120SMD-F155
Brand: ON Semiconductor
SKU: FGH25T120SMD-F155
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor FGH25T120SMD-F155

Part No.:: FGH25T120SMD-F155

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:: FGH25T120SMD-F155.pdf

Description:: IGBT 1200V 50A 428W TO247-3

In Stock:: 2907

Quantity:: Add To Cart

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FGH25T120SMD-F155 Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
IGBTType:
Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
50 A
Current-CollectorPulsed(Icm):
100 A
Vce(on)(Max)@VgeIc:
2.4V @ 15V, 25A
Power-Max:
428 W
SwitchingEnergy:
1.74mJ (on), 560µJ (off)
InputType:
Standard
GateCharge:
225 nC
Td(on/off)@25°C:
40ns/490ns
TestCondition:
600V, 25A, 23Ohm, 15V
ReverseRecoveryTime(trr):
60 ns
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

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FGH25T120SMD-F155 information

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FGH25T120SMD-F155 Typical application Circuitry

FGH25T120SMD-F155

The FGH25T120SMD-F155 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, showcasing the company's commitment to advancing power semiconductor technology. This IGBT is engineered for high efficiency and fast switching, making it particularly well-suited for applications such as electric vehicle (EV) chargers, solar inverters, and industrial motor drives. It is part of a series designed to offer a combination of low conduction and switching losses, with a focus on enhancing system reliability and performance in high-power electronic systems.

1. Operational Voltage Specifications and Power Supply Integration: The FGH25T120SMD-F155 is designed to operate effectively at high voltages, with a collector-emitter voltage rating of 1200V. This feature allows it to be integrated into power systems that operate at high voltage levels, providing the efficiency and reliability required for sophisticated power conversion tasks. The device is optimized for use with power supplies that can accommodate its high-voltage requirements, ensuring seamless compatibility across a variety of applications.

2. Comprehensive Connectivity and Detailed Pin Layout: The FGH25T120SMD-F155 is encapsulated in a robust package that features three primary terminals for connectivity: Gate (G), Collector (C), and Emitter (E). The Gate terminal serves as the control input, where the switching signal is applied. The Collector terminal is connected to the high-voltage supply, acting as the main current pathway during the IGBT's conducting phase. The Emitter terminal is typically connected to the load or ground, completing the circuit. Ensuring precise connections to these terminals is critical for maximizing the performance of the FGH25T120SMD-F155 in power electronic circuits.

3. Strategies for Maximizing System Efficiency: Implementing the FGH25T120SMD-F155 in power electronics systems necessitates a thoughtful approach to circuit design. Optimizing the gate drive circuit to accurately control the IGBT's switching behavior, minimizing resistance and inductance in the paths between the IGBT and other components, and aligning the power supply voltage with the device's operational specifications are all crucial for enhancing efficiency and reliability.

4. Advanced Thermal Management Practices: Efficient thermal management is vital for maintaining the FGH25T120SMD-F155's performance and extending its service life. Although the device's package is designed to facilitate heat dissipation, additional cooling measures such as heatsinks or liquid cooling systems may be required to effectively manage thermal loads in high-power applications. Implementing thermal monitoring and incorporating protective circuits can help in preventing thermal overload, ensuring the IGBT operates within safe temperature limits.

5. Circuit Integration Guidelines for Enhanced Performance: The successful integration of the FGH25T120SMD-F155 into a power management system involves careful planning and design. This includes employing snubber circuits to protect the IGBT from voltage spikes, selecting appropriate capacitors and inductors that complement the device's switching characteristics, and designing a PCB layout that minimizes electromagnetic interference while optimizing thermal management. A well-conceived circuit design will leverage the FGH25T120SMD-F155's fast switching capabilities and high efficiency to achieve superior performance in power conversion applications.

6. Component Selection for System Optimization: Achieving optimal performance with the FGH25T120SMD-F155 goes beyond the IGBT itself and requires careful selection of complementary components. Choosing gate drivers with the correct drive strength, precision capacitors for filtering, and suitable inductors for smooth current flow is essential. The strategic selection of these components is key to maximizing the efficiency, performance, and durability of the system, highlighting the importance of a comprehensive design approach.

In summary, the FGH25T120SMD-F155 from ON Semiconductor represents a leap forward in IGBT technology, delivering exceptional efficiency, robustness, and reliability for high-voltage, high-power applications. Its sophisticated electrical characteristics, combined with strategic connectivity, effective thermal management techniques, and comprehensive circuit design considerations, make it an indispensable component for advancing power management solutions in a wide range of industrial and energy domains.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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