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Name: FGA25N120ANTDTU
Brand: ON Semiconductor
SKU: FGA25N120ANTDTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FGA25N120ANTDTU

Part No.:: FGA25N120ANTDTU

Manufacturer:: ON Semiconductor

Package:: TO-3P-3, SC-65-3

Datasheet:: FGA25N120ANTDTU.pdf

Description:: IGBT NPT/TRENCH 1200V 50A TO3P

In Stock:: 3451

Quantity:: Add To Cart

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FGA25N120ANTDTU Specifications

Packaging:
Bulk,Tube
Series:
-
ProductStatus:
Last Time Buy
IGBTType:
NPT and Trench
Voltage-CollectorEmitterBreakdown(Max):
1200 V
Current-Collector(Ic)(Max):
50 A
Current-CollectorPulsed(Icm):
90 A
Vce(on)(Max)@VgeIc:
2.65V @ 15V, 50A
Power-Max:
312 W
SwitchingEnergy:
4.1mJ (on), 960µJ (off)
InputType:
Standard
GateCharge:
200 nC
Td(on/off)@25°C:
50ns/190ns
TestCondition:
600V, 25A, 10Ohm, 15V
ReverseRecoveryTime(trr):
350 ns
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

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FGA25N120ANTDTU information

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FGA25N120ANTDTU Typical application Circuitry

FGA25N120ANTDTU

The FGA25N120ANTDTU is a high-performance IGBT (Insulated Gate Bipolar Transistor) developed by Fairchild Semiconductor (now part of ON Semiconductor). This device is a part of Fairchild's extensive IGBT portfolio designed for a wide range of applications, emphasizing efficiency, power density, and reliability. The FGA25N120ANTDTU is particularly tailored for high-voltage and high-speed switching applications, making it an ideal choice for inverter systems, power supplies, and motor drives. This IGBT module is unique in that it combines the high-voltage and high-current handling capabilities of bipolar transistors with the high-efficiency and fast-switching properties of MOSFETs.

1. Voltage Specifications and Power Supply Requirements: The FGA25N120ANTDTU is optimized to operate at high voltages, with a collector-emitter voltage (V_CE) rating of 1200V, which makes it suitable for applications requiring high voltage handling capability. The device is designed to be used with power supplies that can accommodate this voltage level, ensuring that the IGBT can perform optimally in various power conversion and management tasks.

2. Pin Configuration and Connection Details: The FGA25N120ANTDTU comes in a TO-3PN package, featuring three primary terminals: the Collector (C), the Emitter (E), and the Gate (G). The Collector terminal is connected to the high-voltage supply, the Emitter terminal is connected to the load or ground, and the Gate terminal is where the control signal is applied to modulate the conduction state of the IGBT. For effective operation, it's crucial to ensure that these connections are made accurately to prevent any potential issues in the circuit.

3. Optimizing System Efficiency through Effective Connectivity: To maximize the efficiency of systems incorporating the FGA25N120ANTDTU, it's essential to consider the layout of the circuit carefully. This includes minimizing the length of connections between the IGBT and other components to reduce inductance, using appropriate gate resistors to optimize switching speed and minimize losses, and ensuring that the power supply voltage matches the IGBT's specifications to avoid overvoltage conditions.

4. Advanced Features for Enhanced Performance: The FGA25N120ANTDTU boasts several features that contribute to its superior performance in demanding applications. These include a low on-state voltage drop (V_CE(sat)) to minimize conduction losses, a high switching speed to improve efficiency in power conversion applications, and a robust design that enhances reliability even under high stress conditions.

5. Thermal Management Strategies and Protective Measures: The lifetime and functionality of the FGA25N120ANTDTU depend on efficient heat management. The device's TO-3PN package is designed to facilitate heat dissipation, but additional measures such as mounting the IGBT on a heatsink, using thermal interface materials, and ensuring adequate airflow around the device are often necessary. Monitoring the temperature of the IGBT and implementing overtemperature protection circuits can also help prevent thermal overload and ensure safe operation.

6. Circuit Integration Considerations for Optimal Design: Integrating the FGA25N120ANTDTU into a power management system involves careful planning and design. This includes the use of snubber circuits to protect the IGBT from voltage spikes, selecting appropriate capacitors to manage voltage transients, and ensuring that the PCB layout is optimized for thermal management and minimal parasitic inductances. A well-designed circuit will leverage the FGA25N120ANTDTU's capabilities to achieve high efficiency and reliability in power conversion applications.

7. Selection of Complementary Components for System Optimization: Achieving the best performance with the FGA25N120ANTDTU requires the selection of compatible and complementary components. This includes choosing the right diodes, resistors, and capacitors that match the voltage and current ratings of the IGBT, as well as selecting a suitable driver circuit to control the IGBT effectively. To improve the overall performance, lifespan, and efficiency of the system, careful selection of these parts is essential.

In summary, the FGA25N120ANTDTU from Fairchild Semiconductor is a high-voltage, high-speed IGBT module that offers exceptional efficiency and performance for a wide range of power applications. Its advanced electrical characteristics, combined with strategic circuit connectivity, thermal management practices, and comprehensive system design considerations, make it a valuable component for advancing power management solutions across various sectors.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FGA25N120ANTDTU.

(3)The PartNo is unused and only in the original unpacked packaging.

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