What is the Additional Feature ?

Name: MMBF4392LT1G
Brand: ON Semiconductor
SKU: MMBF4392LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor MMBF4392LT1G

Part No.:: MMBF4392LT1G

Manufacturer:: ON Semiconductor

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBF4392LT1G.pdf

Description:: JFET N-CH 30V 0.225W SOT23-3

In Stock:: 2225

Quantity:: Add To Cart

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MMBF4392LT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Voltage-Breakdown(V(BR)GSS):
30 V
DraintoSourceVoltage(Vdss):
30 V
Current-Drain(Idss)@Vds(Vgs=0):
25 mA @ 15 V
CurrentDrain(Id)-Max:
-
Voltage-Cutoff(VGSoff)@Id:
2 V @ 10 nA
InputCapacitance(Ciss)(Max)@Vds:
14pF @ 15V
Resistance-RDS(On):
60 Ohms
Power-Max:
225 mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MMBF4392LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MMBF4392LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MMBF4392LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MMBF4392LT1G information

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MMBF4392LT1G Typical application Circuitry

MMBF4392LT1G

The MMBF4392LT1G is an N-channel JFET (Junction Field-Effect Transistor) employed for its high-frequency operation, typically used in RF (Radio Frequency) applications and analog switches.

Application Scenarios: The MMBF4392LT1G shines in radio frequency amplification due to its ability to operate efficiently at high frequencies.

Principal Parameters: Characteristics of MMBF4392LT1G include a gate-source voltage of -40V, drain-source voltage of 40V, and a forward gate current of 50mA, with a power dissipation of 350mW.

Circuit Connection in an RF Amplifier

1. Source Connection:

- Linkage: Pin 3 of the MMBF4392LT1G connects to the circuit ground.

- Rationale: This connection establishes the reference ground for the operation of the JFET, stabilizing the flow of current.

2. Drain Connection:

- Linkage: To control the current and safeguard the JFET, Pin 2 is connected to the load via a resistor.

- Objective: Facilitates the flow of amplified RF signals to the load, ensuring operational efficiency.

3. Gate Connection:

- Association: Pin 1 is typically connected to the RF signal source through a coupling capacitor.

- Intention: The capacitor blocks DC components, ensuring only the AC (RF signal) reaches the gate, preventing the DC bias from being affected.

4. Biasing:

- Integration: A biasing network of resistors is essential to set the operating point of the MMBF4392LT1G.

- Aim: Ensuring the JFET operates in the active region, achieving optimal amplification of RF signals.

Design Considerations:

1. Operating Frequency:

- Scrutiny: Evaluate the operating frequency to optimize the components' values connected to the MMBF4392LT1G.

- Significance: Ensuring the JFET and the entire circuit offer peak performance at the desired frequency.

2. Thermal Management:

- Adoption: To effectively dissipate the heat produced by the MMBF4392LT1G, integrate heat sinks or other thermal management techniques.

- Necessity: Minimizing the risk of thermal damage, ensuring consistent performance and enhancing the JFET's lifespan.

3. Signal Integrity:

- Examination: Analyze and test the integrity of the amplified RF signal.

- Purpose: Confirming the MMBF4392LT1G's efficacy in maintaining signal quality and amplification without introducing significant noise or distortion.

In closing, MMBF4392LT1G's applicability in RF amplification hinges on meticulous design practices. Precise biasing, efficient thermal management, and operational frequency optimization are paramount in unleashing the JFET's optimal performance, establishing it as an indispensable asset in high-frequency applications.

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6. What is the process for return or replacement of MMBF4392LT1G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBF4392LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations