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Name: MBRA2H100T3G
Brand: ON Semiconductor
SKU: MBRA2H100T3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor MBRA2H100T3G

Part No.:: MBRA2H100T3G

Manufacturer:: ON Semiconductor

Package:: DO-214AC, SMA

Datasheet:: MBRA2H100T3G.pdf

Description:: DIODE SCHOTTKY 100V 2A SMA

In Stock:: 2020

Quantity:: Add To Cart

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MBRA2H100T3G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
RoHS:
RoHS
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type:
Schottky
Part Status:
Active
Mounting Type:
Surface Mount
Capacitance @ Vr, F:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
8 µA @ 100 V
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
2A
Operating Temperature - Junction:
-65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If:
790 mV @ 2 A

MBRA2H100T3G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MBRA2H100T3G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MBRA2H100T3G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MBRA2H100T3G information

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MBRA2H100T3G Typical application Circuitry

The MBRA2H100T3G is categorized within the Schottky diodes series, well-regarded for their exceptional efficiency in directing current flow and their proficiency in switching at high speeds. These diodes are typically chosen for their low forward voltage drop, which is a crucial factor in reducing power loss, making them suitable for an array of power-sensitive applications.

1. Electrical Specifications: With a maximum repetitive reverse voltage (V_RRM) of 100 volts, the MBRA2H100T3G is adept at handling moderate voltage levels while maintaining structural integrity. It can conduct a forward current (I_FM) of up to 2 amperes, indicative of its capacity to manage a significant current flow when forward-biased, without overheating.

2. Pin Layout and Device Packaging: Housed in a surface-mount package, the MBRA2H100T3G is designed for efficient integration into printed circuit boards where space optimization is key. The anode and cathode terminals are located on the device. The anode, being the positive terminal, and the cathode, the negative one, must be correctly identified and connected within the circuit to ensure the diode functions as intended.

3. Connection Strategy in Circuits: Implementing the MBRA2H100T3G into an electrical circuit necessitates precise connections: the anode must be linked to the positive voltage supply, while the cathode should connect to the negative side, often leading to the ground. This setup is essential in applications such as power supply rectification, where AC is converted into DC, or in circuits requiring protection against reverse polarity.

4. Common Applications: The MBRA2H100T3G is often utilized in the power regulation stages of electronic devices, playing a pivotal role in the conversion from AC to DC with minimal energy loss. It is also advantageous in low-power DC-DC converters and is implemented in circuits as a protective measure against potential reverse current damage.

5. Heat Dissipation Measures: The MBRA2H100T3G, although efficient, can generate heat during operation. It is vital to adopt heat management techniques, including heat sinks or thermal vias on the PCB, to dissipate heat effectively and preserve the diode's operational integrity.

6. Reverse Leakage Current Management: An essential feature of the MBRA2H100T3G is its low reverse leakage current, a property that helps to maintain the efficiency of the power circuit, especially in battery-operated devices where preserving energy is crucial.

7. Switching Dynamics: The MBRA2H100T3G is characterized by its ability to switch between on and off states swiftly, which is especially valuable in switching power supply designs where fast response times are beneficial.

To encapsulate, the MBRA2H100T3G Schottky diode is a high-performance component, integral to circuits that demand efficient power management and fast switching. Its small surface-mount form factor is ideal for modern electronics where room is limited. Circuit designers should heed the electrical and thermal characteristics of the MBRA2H100T3G, ensuring that it is installed with correct polarity and with adequate provisions for heat dissipation to achieve optimal performance and durability.

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6. What is the process for return or replacement of MBRA2H100T3G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MBRA2H100T3G we delivered, we will accept the replacement or return of the MBRA2H100T3G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MBRA2H100T3G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations