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Name: LTC4357IMS8#TRPBF
Brand: Analog Devices Inc.
SKU: LTC4357IMS8#TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Analog Devices Inc. LTC4357IMS8#TRPBF

Part No.:: LTC4357IMS8#TRPBF

Manufacturer:: Analog Devices Inc.

Package:: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Datasheet:: LTC4357IMS8#TRPBF.pdf

Description:: IC OR CTRLR N+1 8MSOP

In Stock:: 3164

Quantity:: Add To Cart

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LTC4357IMS8#TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
Type:
N+1 ORing Controller
FETType:
N-Channel
Ratio-Input:Output:
N:1
InternalSwitch(s):
No
DelayTime-ON:
-
DelayTime-OFF:
300 ns
Current-Output(Max):
-
Current-Supply:
500 µA
Voltage-Supply:
9V ~ 80V
Applications:
Automotive, Redundant Power Supplies, Telecom Infrastructure
OperatingTemperature:
-40°C ~ 85°C
MountingType:
Surface Mount

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LTC4357IMS8#TRPBF information

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LTC4357IMS8#TRPBF Typical application Circuitry

LTC4357IMS8 TRPBF

The LTC4357IMS8#TRPBF is a robust, high voltage ideal diode controller that facilitates the use of an N-channel MOSFET as a low loss replacement for Schottky diodes in power path applications. It's engineered to provide seamless power switching and protection in systems where efficiency and reliability are paramount.

Application Scenarios:

The LTC4357IMS8#TRPBF is extensively employed in systems requiring high-reliability power supply redundancy, such as data centers, telecommunications equipment, and aerospace power systems, where the continuity of power is critical.

Parameter Features:

The LTC4357IMS8#TRPBF distinguishes itself with features like a wide input voltage range, low quiescent current, and the capacity to control an external N-channel MOSFET, minimizing the voltage drop and power dissipation typically associated with power ORing diodes.

Application Scenario: Aerospace Power Redundancy System

Power Source Configuration: In an aerospace application, the LTC4357IMS8#TRPBF is used to manage power between a primary power source and a secondary backup system to ensure uninterrupted power supply to essential avionics and instrumentation.

- Primary Power Source Connection: Attach the primary power source to the IN pin of the LTC4357IMS8#TRPBF, ensuring it normally powers the system under standard conditions.

- Backup Power Source Connection: Parallelly connect the secondary power source to the same IN pin, allowing the LTC4357IMS8#TRPBF to automatically switch to this source if the primary fails.

MOSFET Implementation for Ideal Diode Functionality: The LTC4357IMS8#TRPBF drives an external N-channel MOSFET to emulate an ideal diode, providing a high-efficiency power path.

- MOSFET Gate Drive: Connect the GATE pin of the LTC4357IMS8#TRPBF to the gate of the external MOSFET. The LTC4357IMS8#TRPBF dynamically adjusts the gate voltage to ensure optimal conduction with minimal loss.

- Power Path Establishment: The source of the MOSFET is connected to the IN pin (where the power sources are attached), and the drain is linked to the system load. This setup facilitates power flow from the selected source to the load with negligible voltage drop.

Design Considerations

MOSFET Selection: Choosing a suitable external N-channel MOSFET is critical for the performance and efficiency of the LTC4357IMS8#TRPBF-based circuit.

- Voltage and Current Specifications: The MOSFET should surpass the maximum anticipated voltage and current levels in the application to prevent over-stress and ensure reliability.

- Thermal Performance: Opt for a MOSFET with a low on-resistance (Rds(on)) to reduce heat generation and improve thermal efficiency.

Protection Against Reverse Current: The LTC4357IMS8#TRPBF inherently blocks reverse current flow, but additional measures may be required in critical aerospace applications.

- Reverse Protection Strategy: Ensure the MOSFET's intrinsic body diode is oriented to prevent reverse current flow from the load to the sources, enhancing the system's safety and reliability.

Thermal Management Considerations: Effective heat dissipation is essential, particularly in high-current applications or compact aerospace environments.

- Heat Dissipation Solutions: Implement heat sinks or thermally enhanced PCB designs to manage the heat generated by the MOSFET, especially when operating at high currents or in high-temperature conditions.

Minimizing Parasitic Inductance: The circuit layout should be optimized to reduce parasitic inductance, which can affect the performance and stability of the LTC4357IMS8#TRPBF.

- PCB Layout Optimization: Arrange the components to minimize the loop area and keep the connections between the LTC4357IMS8#TRPBF, the MOSFET, and the power sources as short as possible, reducing parasitic inductance and enhancing response times.

Deploying the LTC4357IMS8#TRPBF in an aerospace power redundancy system necessitates careful consideration of MOSFET selection, reverse current protection, thermal management, and the minimization of parasitic inductance to ensure the system's reliability, efficiency, and safety under demanding conditions.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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