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Name: LTC4357IMS8#PBF
Brand: Analog Devices Inc.
SKU: LTC4357IMS8#PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Analog Devices Inc. LTC4357IMS8#PBF

Part No.:: LTC4357IMS8#PBF

Manufacturer:: Analog Devices Inc.

Package:: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Datasheet:: LTC4357IMS8#PBF.pdf

Description:: IC OR CTRLR N+1 8MSOP

In Stock:: 3777

Quantity:: Add To Cart

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LTC4357IMS8#PBF Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
Type:
N+1 ORing Controller
FETType:
N-Channel
Ratio-Input:Output:
N:1
InternalSwitch(s):
No
DelayTime-ON:
-
DelayTime-OFF:
300 ns
Current-Output(Max):
-
Current-Supply:
500 µA
Voltage-Supply:
9V ~ 80V
Applications:
Automotive, Redundant Power Supplies, Telecom Infrastructure
OperatingTemperature:
-40°C ~ 85°C
MountingType:
Surface Mount

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LTC4357IMS8#PBF information

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LTC4357IMS8#PBF Typical application Circuitry

LTC4357IMS8 PBF

The LTC4357IMS8#PBF is a high voltage, low quiescent current, single channel ideal diode controller that replaces power Schottky diodes with a MOSFET, significantly reducing power dissipation and heat generation. This device is designed for applications requiring power ORing, reverse battery protection, and load switching with minimal voltage drop.

Application Scenarios:

The LTC4357IMS8#PBF is frequently used in redundant power supply systems, such as server farms, telecom equipment, and industrial automation systems, where continuous operation is critical, and power sources must be seamlessly switched without interruption.

Parameter Features:

Key features of the LTC4357IMS8#PBF include its wide operating voltage range, low forward voltage drop, high current capability, and the ability to control an external N-channel MOSFET to emulate an ideal diode function.

Application Scenario: Redundant Power Supply System

Power Source Inputs: In a redundant power supply system, the LTC4357IMS8#PBF manages the transition between primary and backup power sources to ensure uninterrupted power to critical components.

- Primary Power Input: Connect the primary power source's positive terminal to the LTC4357IMS8#PBF's IN pin. This source is typically the one preferred under normal operating conditions.

- Backup Power Input: The backup power source, which kicks in if the primary fails, is connected in parallel to the primary at the LTC4357IMS8#PBF's IN pin, ensuring that both sources are ORed together.

MOSFET Control for Ideal Diode Function: The LTC4357IMS8#PBF controls an external N-channel MOSFET to provide a low-loss path from the power sources to the load.

- Gate Control: Connect the GATE pin of the LTC4357IMS8#PBF to the gate of the external N-channel MOSFET. The LTC4357IMS8#PBF will modulate this gate voltage to maintain a forward conduction path with minimal voltage drop, mimicking an ideal diode.

- Source and Drain Connections: The source of the MOSFET is connected to the power sources at the IN pin of the LTC4357IMS8#PBF, and the drain is connected to the load, allowing current to flow from the power sources to the load when enabled.

Design Considerations

Choosing the Right MOSFET: The selection of the external N-channel MOSFET is crucial for optimal performance.

- Voltage and Current Ratings: Ensure the MOSFET's voltage and current ratings exceed the maximum expected conditions in the application to prevent failure.

- On-Resistance (Rds(on)): Choose a MOSFET with low Rds(on) to minimize power loss and heat generation in the diode emulation.

Reverse Battery Protection: The LTC4357IMS8#PBF can also provide reverse battery protection, preventing damage to the system if a power source is connected backward.

- Diode Orientation: Ensure that the body diode of the MOSFET is oriented to block reverse current from the load to the power sources, leveraging the LTC4357IMS8#PBF's capability to prevent reverse conduction.

Thermal Management: Given the power dissipation in the external MOSFET, especially at high currents, thermal management becomes a critical design aspect.

- Heat Sinking: Depending on the MOSFET's power dissipation, a heat sink or a PCB with adequate thermal relief may be necessary to maintain the MOSFET within its safe operating temperature range.

- Ambient Temperature: Consider the ambient temperature of the operating environment to ensure that it does not exacerbate thermal issues.

Parasitic Inductance and Capacitance: Minimize parasitic inductance and capacitance in the circuit layout to ensure fast response times and reduce the risk of oscillations.

- PCB Layout: Keep the trace lengths between the LTC4357IMS8#PBF, the MOSFET, and the power sources as short as possible to minimize parasitics.

- Decoupling Capacitors: Place decoupling capacitors close to the LTC4357IMS8#PBF's IN pin to stabilize the input voltage and filter out high-frequency noise.

Incorporating the LTC4357IMS8#PBF into a redundant power supply system requires careful consideration of MOSFET selection, reverse battery protection, thermal management, and minimizing parasitic effects to ensure reliable, efficient operation and seamless power source switching.

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6. What is the process for return or replacement of LTC4357IMS8#PBF?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of LTC4357IMS8#PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

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