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Name: FOD8342TR2V
Brand: ON Semiconductor
SKU: FOD8342TR2V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FOD8342TR2V

Part No.:: FOD8342TR2V

Manufacturer:: ON Semiconductor

Package:: 6-SOIC (0.268, 6.80mm Width)

Datasheet:: FOD8342TR2V.pdf

Description:: OPTOISO 5KV 1CH GATE DRIVER 6SOP

In Stock:: 2614

Quantity:: Add To Cart

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FOD8342TR2V Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
Technology:
Optical Coupling
NumberofChannels:
1
Voltage-Isolation:
5000Vrms
CommonModeTransientImmunity(Min):
20kV/µs
PropagationDelaytpLH/tpHL(Max):
210ns, 210ns
PulseWidthDistortion(Max):
65ns
Rise/FallTime(Typ):
38ns, 24ns
Current-OutputHighLow:
2.5A, 2.5A
Current-PeakOutput:
3A
Voltage-Forward(Vf)(Typ):
1.5V
Current-DCForward(If)(Max):
25 mA
Voltage-OutputSupply:
10V ~ 30V
OperatingTemperature:
-40°C ~ 100°C
MountingType:
Surface Mount

FOD8342TR2V this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FOD8342TR2V price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FOD8342TR2V to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FOD8342TR2V information

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FOD8342TR2V Typical application Circuitry

FOD8342TR2V

FOD8342TR2V is a variant of the FOD8342 series, a High-Speed MOSFET Gate Drive Optocoupler designed by ON Semiconductor. It is engineered to provide efficient electrical isolation between its input and output with the capability to drive high-speed MOSFETs and IGBTs. This optocoupler is utilized in various applications that demand rapid switching and high voltage isolation, such as in power supplies, motor controls, and industrial inverters.

Application Scenarios for FOD8342TR2V

1. Inverter Circuits: Widely used in inverter circuits for renewable energy sources like solar panels and wind turbines, where efficient power conversion is crucial.

2. Electric Vehicle (EV) Chargers: In the power stages of EV chargers to ensure electrical isolation while managing high power levels.

3. Industrial Motor Drives: For controlling industrial motors, providing the necessary isolation and switching speeds.

Parameter Features of FOD8342TR2V

- High Output Drive Current: Capable of delivering the drive current required to switch power MOSFETs and IGBTs efficiently.

- High-Speed Operation: Features fast propagation delays and high-speed switching, essential for minimizing switching losses in power conversion circuits.

- High Isolation Voltage: Offers a high isolation voltage, providing safety and reliability in high-voltage applications.

- Compact Packaging: Available in a compact surface-mount package, facilitating integration into space-constrained designs.

Detailed Circuit Connection Using FOD8342TR2V

Application Scenario: Isolated Gate Drive for IGBT in an Industrial Motor Drive

1. Input Signal Connection: Connect the control signal from a microcontroller or PWM controller to the anode (pin 1) and cathode (pin 2) of the internal LED within the FOD8342TR2V. Include a current-limiting resistor in series with the LED to regulate the input current.

2. Output Drive to IGBT Gate: Connect the gate of the IGBT to the collector (pin 6) of the photodetector transistor within the FOD8342TR2V. This connection is responsible for delivering the necessary gate charge to switch the IGBT.

3. Emitter Connection and Ground Isolation: Connect the emitter (pin 5) of the photodetector transistor to the emitter of the IGBT. Ensure that the ground of the FOD8342TR2V output side is isolated from the input side to maintain electrical isolation.

4. Gate Resistor and Protection: Place a resistor between the FOD8342TR2V output and the IGBT gate to control the gate charging speed and include a protection diode across the gate-emitter to protect against negative voltage transients.

Circuit Design Considerations

1. Isolation Barrier Compliance: Ensure the circuit layout adheres to the specified isolation requirements of the FOD8342TR2V, maintaining a safe distance between the input and output sides to protect against high voltage spikes.

2. Power Supply Stability: Use decoupling capacitors close to the FOD8342TR2V to stabilize the supply voltage, crucial in high-speed switching applications to prevent erratic behavior.

3. Gate Drive Characteristics: Adjust the gate resistor value to optimize the IGBT switching characteristics, balancing between switching speed and electromagnetic interference (EMI) generation.

4. Thermal Management: Consider the thermal aspects of the FOD8342TR2V and the IGBT, especially in high-power applications, to ensure reliable operation over the intended temperature range.

By incorporating these design principles, the FOD8342TR2V can be effectively utilized in industrial motor drive applications, offering efficient, reliable, and isolated gate driving capabilities.

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6. What is the process for return or replacement of FOD8342TR2V?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FOD8342TR2V we delivered, we will accept the replacement or return of the FOD8342TR2V only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FOD8342TR2V.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations