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Name: 1ED3121MU12HXUMA1
Brand: Infineon Technologies
SKU: 1ED3121MU12HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies 1ED3121MU12HXUMA1

Part No.:: 1ED3121MU12HXUMA1

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.295, 7.50mm Width)

Datasheet:: 1ED3121MU12HXUMA1.pdf

Description:: 1ED3121MU12HXUMA1

In Stock:: 2728

Quantity:: Add To Cart

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1ED3121MU12HXUMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
EiceDriver™
ProductStatus:
Active
Technology:
Magnetic Coupling
NumberofChannels:
1
Voltage-Isolation:
1200Vrms
CommonModeTransientImmunity(Min):
200kV/µs
PropagationDelaytpLH/tpHL(Max):
-
PulseWidthDistortion(Max):
-
Rise/FallTime(Typ):
15ns, 15ns
Current-OutputHighLow:
5.5A, 5.5A
Current-PeakOutput:
5.5A
Voltage-Forward(Vf)(Typ):
-
Current-DCForward(If)(Max):
-
Voltage-OutputSupply:
10V ~ 35V
OperatingTemperature:
-40°C ~ 125°C
MountingType:
Surface Mount

1ED3121MU12HXUMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 1ED3121MU12HXUMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 1ED3121MU12HXUMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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1ED3121MU12HXUMA1 information

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1ED3121MU12HXUMA1 Typical application Circuitry

1ED3121MU12HXUMA1

The 1ED3121MU12HXUMA1 is a highly integrated, high-performance gate driver IC designed for efficient and reliable driving of silicon carbide (SiC) MOSFETs and IGBTs.

Applications

The 1ED3121MU12HXUMA1 is well-suited for demanding applications that require high-speed switching, robust protection features, and reliable isolation. It's extensively used in electric vehicle (EV) powertrains, solar inverters, uninterruptible power supplies (UPS), and high-performance industrial drives.

Key Parameters and Features

- Integrated Isolation: Provides electrical isolation between the low-voltage and high-voltage sides, enhancing safety.

- Desaturation Detection: Protects the power semiconductor by detecting and reacting to overcurrent conditions.

- Under-Voltage Lockout (UVLO): Ensures that the gate driver operates in a safe voltage range, preventing malfunction.

- High-Driving Capability: Capable of driving gates with high efficiency, ensuring rapid switching of power devices.

Application Scenario: Electric Vehicle Powertrain

One pivotal application of the 1ED3121MU12HXUMA1 involves its integration within the power electronics module of an electric vehicle (EV) powertrain, particularly for driving SiC MOSFETs in the inverter circuit that converts DC from the battery to AC for the motor.

Detailed Circuit Connection

- Isolation Between Control and Power Side: Initially, leverage the integrated isolation feature of the 1ED3121MU12HXUMA1 to safely separate the low-voltage control circuits (microcontroller or DSP) from the high-voltage power circuits. This isolation is critical for protecting the control side from the high-voltage spikes and noises.

- Gate Drive Connection: Connect the output of the 1ED3121MU12HXUMA1 directly to the gate of the SiC MOSFET. This gate driver is capable of providing the high peak current required for fast charging and discharging of the MOSFET gate capacitance, which is crucial for achieving high-efficiency switching.

- Desaturation Detection Implementation: Utilize the desaturation detection feature of the 1ED3121MU12HXUMA1 by connecting its DESAT pin to the drain of the MOSFET. This setup allows the gate driver to monitor the voltage across the MOSFET; if the voltage exceeds a threshold for a certain period, indicating a potential fault or overcurrent condition, the gate driver will shut down the MOSFET gate drive to protect the circuit.

- Under-Voltage Lockout Configuration: Ensure the 1ED3121MU12HXUMA1 is configured correctly for under-voltage lockout (UVLO) by connecting its UVLO pin to a suitable reference voltage. This ensures that the gate driver is only operational when the supply voltage is within the safe operating range, thereby preventing improper gate driving during low supply conditions.

- Power Supply and Grounding: Connect the VCC pin of the 1ED3121MU12HXUMA1 to a stable and clean power supply, and ensure good grounding practices to minimize noise and ensure stable operation. The ground layout is particularly important to avoid ground loops and ensure that the high currents associated with the gate drive do not interfere with the low-current control signals.

Design Considerations

When designing with the 1ED3121MU12HXUMA1, several critical factors must be considered:

- Thermal Management: The 1ED3121MU12HXUMA1 and the driven SiC MOSFETs can generate significant heat during high-speed switching. Adequate cooling methods, such as heat sinks or forced air cooling, should be employed.

- Layout Considerations: Minimize the loop area between the gate driver, gate resistor, and MOSFET gate to reduce inductance and switching losses. Careful PCB layout can significantly impact the performance and efficiency of the system.

- Protection Features Configuration: Configure the desaturation detection and UVLO features according to the specific requirements of the application to ensure robust protection against overcurrent and undervoltage conditions.

By considering these aspects and leveraging the features of the 1ED3121MU12HXUMA1, designers can develop efficient, reliable, and high-performance power electronics systems for electric vehicles and other demanding applications.

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6. What is the process for return or replacement of 1ED3121MU12HXUMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 1ED3121MU12HXUMA1 we delivered, we will accept the replacement or return of the 1ED3121MU12HXUMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 1ED3121MU12HXUMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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