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Name: 1ED3124MU12HXUMA1
Brand: Infineon Technologies
SKU: 1ED3124MU12HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies 1ED3124MU12HXUMA1

Part No.:: 1ED3124MU12HXUMA1

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.295, 7.50mm Width)

Datasheet:: 1ED3124MU12HXUMA1.pdf

Description:: 1ED3124MU12HXUMA1

In Stock:: 3270

Quantity:: Add To Cart

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1ED3124MU12HXUMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
EiceDriver™
ProductStatus:
Active
Technology:
Magnetic Coupling
NumberofChannels:
1
Voltage-Isolation:
1200Vrms
CommonModeTransientImmunity(Min):
200kV/µs
PropagationDelaytpLH/tpHL(Max):
-
PulseWidthDistortion(Max):
-
Rise/FallTime(Typ):
15ns, 15ns
Current-OutputHighLow:
5.5A, 5.5A
Current-PeakOutput:
14A
Voltage-Forward(Vf)(Typ):
-
Current-DCForward(If)(Max):
-
Voltage-OutputSupply:
10V ~ 35V
OperatingTemperature:
-40°C ~ 125°C
MountingType:
Surface Mount

1ED3124MU12HXUMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 1ED3124MU12HXUMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 1ED3124MU12HXUMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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1ED3124MU12HXUMA1 information

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1ED3124MU12HXUMA1 Typical application Circuitry

1ED3124MU12HXUMA1

The 1ED3124MU12HXUMA1 is a cutting-edge gate driver integrated circuit (IC) from the 1ED series, specifically engineered for driving high-voltage, fast-switching power semiconductors such as silicon carbide (SiC) MOSFETs and Insulated-Gate Bipolar Transistors (IGBTs). This series is renowned for enhancing the efficiency and reliability of applications like renewable energy systems, electric vehicle (EV) powertrains, and industrial motor drives. The 1ED3124MU12HXUMA1, with its advanced protection features and robust design, is tailored to meet the demanding requirements of these high-performance applications, ensuring precise control and safety in operation.

1. Operating Voltage: The device is designed to operate with a supply voltage (VCC) typically in the range of 15V to 18V, which is essential for powering the internal circuitry and providing the necessary gate drive voltage to efficiently switch the external power devices. This voltage range is chosen to optimize the performance and reliability of the gate driving function, particularly in systems utilizing SiC MOSFETs and IGBTs, which require precise gate control for optimal efficiency.

2. Pin Configuration and Connectivity: The 1ED3124MU12HXUMA1 is encapsulated in a compact, surface-mount package that includes several critical pins: VCC (power supply), GND (ground), IN+ (non-inverting input), IN- (inverting input), DESAT (desaturation detection input), FAULT (fault output signal), GATE (gate drive output), Miller CLAMP (for controlling Miller current during switching), VEE (negative power supply for the gate driver, typically connected to the emitter or source of the power device), along with two NC (no connection) pins and a thermal pad for heat dissipation. For effective circuit integration, VCC and VEE should be connected to the appropriate power supplies, GND to the system ground, and the GATE pin to the gate terminal of the power semiconductor. The IN+ and IN- pins are used to receive the drive signals, which can be configured for non-inverting or inverting operation. The DESAT pin is connected through a resistor to the power device's drain or collector for overcurrent protection. The FAULT pin, typically requiring a pull-up resistor, signals overcurrent or other fault conditions, and the Miller CLAMP is optionally used to mitigate the Miller effect during switching events.

3. Circuit Integration Guidelines: Integrating the 1ED3124MU12HXUMA1 into a power electronics system involves ensuring proper biasing by connecting VCC to the specified operating voltage and VEE to the negative supply if required. The input signals (IN+, IN-) must be carefully managed to ensure the correct timing and polarity for driving the external power device. Implementing DESAT protection involves connecting the DESAT pin to the controlled semiconductor through a current-sensing resistor, allowing the IC to detect and react to overcurrent situations. The FAULT output serves as a critical diagnostic tool, enabling the system to respond to fault conditions rapidly. Additionally, the Miller CLAMP function can be activated to prevent unintended gate turn-on during high dV/dt events, enhancing switching reliability.

4. Protection and Reliability: The 1ED3124MU12HXUMA1 includes several features designed to protect the power device and improve system reliability. The DESAT detection provides a fast shutdown mechanism in the event of overcurrent, protecting the power device from damage. The integrated Miller CLAMP function prevents false turn-on of the power device caused by the Miller effect, which is particularly beneficial in high-switching-speed applications. The FAULT output offers a means for the system to quickly identify and respond to fault conditions, further enhancing system safety and reliability.

5. Application Scenarios: This IC is ideally suited for advanced applications requiring high-speed, efficient control of power semiconductors. In renewable energy inverters, the precise gate drive control enables optimal power conversion efficiency. In EV powertrains, the robust design and advanced protection features ensure reliable operation under dynamic conditions. Industrial motor drives benefit from the precise control and fast switching capabilities of the 1ED3124MU12HXUMA1, leading to improved performance and energy efficiency.

The 1ED3124MU12HXUMA1 gate driver IC exemplifies a sophisticated solution for modern power electronics, offering a blend of performance, protection, and precision that enhances the operation and safety of systems employing SiC MOSFETs and IGBTs. Its integration into a circuit not only facilitates efficient switching but also contributes to the overall reliability and performance of the application, underscoring its value in high-demand environments.

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6. What is the process for return or replacement of 1ED3124MU12HXUMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 1ED3124MU12HXUMA1 we delivered, we will accept the replacement or return of the 1ED3124MU12HXUMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 1ED3124MU12HXUMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations