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Name: MMBTA42Q-7-F
Brand: Diodes Incorporated
SKU: MMBTA42Q-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Diodes Incorporated MMBTA42Q-7-F

Part No.:: MMBTA42Q-7-F

Manufacturer:: Diodes Incorporated

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBTA42Q-7-F.pdf

Description:: SS HI VOLTAGE TRANSISTOR SOT23 T

In Stock:: 2424

Quantity:: Add To Cart

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MMBTA42Q-7-F Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Active
TransistorType:
NPN
Current-Collector(Ic)(Max):
500 mA
Voltage-CollectorEmitterBreakdown(Max):
300 V
VceSaturation(Max)@IbIc:
500mV @ 2mA, 20mA
Current-CollectorCutoff(Max):
100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce:
40 @ 30mA, 10V
Power-Max:
300 mW
Frequency-Transition:
50MHz
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MMBTA42Q-7-F this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MMBTA42Q-7-F price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MMBTA42Q-7-F to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MMBTA42Q-7-F information

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MMBTA42Q-7-F Typical application Circuitry

The MMBTA42Q-7-F is an integral member of the MMBTA42 series, distinguished for its high-voltage NPN bipolar junction transistors engineered for efficient switching and amplification tasks within electronic circuits. This variant is especially noted for its robust design encapsulated in a small surface-mount SOT-23 package, rendering the MMBTA42Q-7-F an exemplary choice for space-efficient designs in high-voltage applications such as power supplies, lighting systems, and electronic switching devices.

1. Collector-Emitter Voltage (VCEO): The MMBTA42Q-7-F is designed to sustain a collector-emitter voltage up to 300V, which mandates cautious application of voltage to the collector terminal to avert exceeding this threshold. This high voltage capability facilitates the transistor's use in circuits demanding efficient voltage regulation and control.

2. Base Terminal Configuration (VB): The base terminal of the MMBTA42Q-7-F functions as the control gate for modulating the transistor's switching actions. Precise voltage application to this terminal is pivotal for dictating the flow of current between the collector and emitter, enabling the transistor to fulfill its role either as an amplifier or a switch, contingent on the circuit design.

3. Emitter Connection (VE): For optimal functionality, the emitter terminal of the MMBTA42Q-7-F should be securely connected to the circuit's ground. This connection is imperative for facilitating the flow of current through the transistor, thereby ensuring its operation within the prescribed specifications and maintaining circuit integrity.

4. Biasing and Stability Considerations: Effective biasing of the MMBTA42Q-7-F is crucial for its operation, involving the application of a forward bias voltage between the base and emitter to activate the transistor, coupled with a reverse bias voltage across the collector and emitter for proper functioning. Incorporation of stabilization components, such as resistors and capacitors, may be necessary to guarantee consistent operation under diverse conditions.

5. Thermal Management: Given the MMBTA42Q-7-F's capacity for high-voltage operation, it is imperative to address thermal management within the circuit design. Provision of adequate heat dissipation measures, including heat sinks and thermal conduction paths, is essential to prevent the transistor from surpassing its maximum temperature limit and ensure reliable performance.

6. Circuit Protection Mechanisms: Despite the MMBTA42Q-7-F's inherent high-voltage endurance, integrating circuit protection elements like current-limiting resistors and voltage transient suppressors can further enhance the device's durability and reliability by protecting it from potential overcurrent and voltage surge conditions.

Employing the MMBTA42Q-7-F within an electronic circuit necessitates a meticulous understanding of the transistor's pin functions and their correct interlinking to fully exploit its high-voltage handling capabilities. The MMBTA42Q-7-F exemplifies the MMBTA42 series' commitment to delivering high-performance, reliable, and space-efficient solutions for complex electronic environments, emphasizing the semiconductor industry's dedication to advancing electronic component technology.

MMBTA42Q-7-F FAQ

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3. Are the MMBTA42Q-7-F price and inventory displayed accurate?

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6. What is the process for return or replacement of MMBTA42Q-7-F?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MMBTA42Q-7-F we delivered, we will accept the replacement or return of the MMBTA42Q-7-F only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBTA42Q-7-F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations