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Name: MMBT5551LT1G
Brand: ON Semiconductor
SKU: MMBT5551LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor MMBT5551LT1G

Part No.:: MMBT5551LT1G

Manufacturer:: ON Semiconductor

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT5551LT1G.pdf

Description:: TRANS NPN 160V 0.6A SOT23-3

In Stock:: 2923

Quantity:: Add To Cart

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MMBT5551LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MMBT5551LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MMBT5551LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MMBT5551LT1G Typical application Circuitry

MMBT5551LT1G

The MMBT5551LT1G is a high-performance NPN bipolar junction transistor, integrating efficacy with precision.

Core Role: The MMBT5551LT1G is primarily engaged in functions like electronic switching and as an amplifier, its compactness and efficiency make it a versatile choice for varied applications.

Utilization Areas: It finds a niche in digital switching applications, where rapid and reliable switching of electronic signals is pivotal.

Characteristic Features: Key attributes of MMBT5551LT1G encompass its rapid response time, low saturation voltage, and ability to operate at elevated temperatures, underscoring its adaptability.

Digital Switching Circuit Connection Details

1. Collector Association

- To Load: Directly connect the collector (Pin 3) to the digital load for efficient signal transfer.

- To Power: Align this pin with a fitting power supply ensuring signal vigor post-switching.

2. Base Association

- To Input Signal: Directly connect the base (Pin 2) to the digital signal. Appropriate base current control is achievable with an inline resistor.

- To Maintain Signal Integrity: The inclusion of filtering components is pivotal to ensure the signal remains unaffected by noise.

3. Emitter Association

- To Ground: Pin 1, the emitter, finds its place grounded, facilitating a return path and setting up the biasing of the MMBT5551LT1G effectively.

- To Ensure Stability: A secure connection is paramount to obviate any potential operational anomalies.

4. Supplementary Components

- For Feedback: Integrate elements that avail feedback, essential for the stabilization of the switching process.

- For Consistency: The choice of top-tier components is instrumental in noise reduction and performance consistency.

Engineering Considerations

1. Setting Bias

- In Active Zone: Task the MMBT5551LT1G within the active zone to avert any signal deformation.

- Check Regularly: A systematic approach to inspecting biasing ensures the transistor is distant from the saturation or cut-off stages, affirming a linear operation.

2. Dissipating Heat

- Cooling Approaches: Enlist proficient heat dissipation strategies to counter MMBT5551LT1G overheating.

- Material Preferences: The endorsement of materials with superior thermal conductivity is integral for enhanced heat dissipation.

3. Verification and Testing

- On Prototypes: The assembly and scrutiny of prototypes are key to confirming efficacy and allowing for needed adjustments.

- Through Simulations: Harnessing simulation software aids in the predictive analysis of circuit behaviors, refining design accuracy.

The judicious integration of MMBT5551LT1G in digital switching circuits aligns performance, efficiency, and reliability, particularly when abiding by these articulated guidelines.

MMBT5551LT1G information

MMBT5551LT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
TransistorType:
NPN
Current-Collector(Ic)(Max):
600 mA
Voltage-CollectorEmitterBreakdown(Max):
160 V
VceSaturation(Max)@IbIc:
200mV @ 5mA, 50mA
Current-CollectorCutoff(Max):
100nA
DCCurrentGain(hFE)(Min)@IcVce:
80 @ 10mA, 5V
Power-Max:
225 mW
Frequency-Transition:
-
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MMBT5551LT1G FAQ

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3. Are the MMBT5551LT1G price and inventory displayed accurate?

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6. What is the process for return or replacement of MMBT5551LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MMBT5551LT1G we delivered, we will accept the replacement or return of the MMBT5551LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBT5551LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations