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Name: MMBT5551LT3G
Brand: ON Semiconductor
SKU: MMBT5551LT3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor MMBT5551LT3G

Part No.:: MMBT5551LT3G

Manufacturer:: ON Semiconductor

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT5551LT3G.pdf

Description:: TRANS NPN 160V 0.6A SOT23-3

In Stock:: 3719

Quantity:: Add To Cart

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MMBT5551LT3G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
TransistorType:
NPN
Current-Collector(Ic)(Max):
600 mA
Voltage-CollectorEmitterBreakdown(Max):
160 V
VceSaturation(Max)@IbIc:
200mV @ 5mA, 50mA
Current-CollectorCutoff(Max):
100nA
DCCurrentGain(hFE)(Min)@IcVce:
80 @ 10mA, 5V
Power-Max:
225 mW
Frequency-Transition:
-
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MMBT5551LT3G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MMBT5551LT3G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MMBT5551LT3G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MMBT5551LT3G information

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MMBT5551LT3G Typical application Circuitry

MMBT5551LT3G

The MMBT5551LT3G has gained prominence as an NPN bipolar junction transistor, celebrated for its adaptability and precision in an assortment of electronic engagements.

Operational Roles: An exemplar of innovation, the MMBT5551LT3G is revered for its dual roles as an electronic switch and an amplifier. Its miniature structure, coupled with superior operational traits, earns it a position in the hearts of intricate electronic ecosystems.

Areas of Deployment: Its adeptness in the art of signal amplification elevates its stature, making it an indispensable asset in environments where the transformation of low-strength electronic signals into higher levels is paramount.

Parameter Attributes: High-frequency operations, low noise outputs, and efficient current handling capacities are the hallmarks of the MMBT5551LT3G, testifying to its suitability across a multitude of applications.

Precision in Signal Amplification Circuit Connection

1. Collector's Role:

- Load Association: With the collector (Pin 3), ensuring its alliance with the load is pivotal for the harmonious current flow after the signal undergoes amplification.

- Power Affinity: Aligning the collector to a fitting power source underscores the seamless continuation of current post-amplification.

2. Interaction with Base:

- Signal Incorporation: Pin 2, the base, is the custodian of the weak signal. Occasionally, the introduction of a resistor becomes mandatory to orchestrate the base current.

- Purity of Signal: Embedding filters at the base is an elementary step, instrumental in safeguarding the signal's integrity.

3. Emitter Engagement:

- Grounding Strategy: Pin 1, the emitter, requires grounding, a procedure elemental in forging a return path and underpinning the transistor's biasing.

- Connection Integrity: Fostering a resilient connection here counteracts prospective operational inconsistencies.

4. Complementary Components:

- Feedback Inclusion: Interspersing feedback elements amplify the circuit's stability and precision in output.

- Quality Assertion: Procuring premium components is pivotal, serving as a bulwark against noise and endorsing operational consistency.

Design Considerations

1. Biasing Consideration:

- Active Region Assurance: Safeguarding MMBT5551LT3G's operation within the active zone is fundamental, circumventing the specter of signal deformation.

- Oversight Mechanism: Constant overwatch on biasing detains the transistor from encroaching into saturation or cut-off realms, bolstering linear functioning.

2. Thermal Management:

- Cooling Infrastructure: Instituting adept thermal management strategies is imperative, safeguarding MMBT5551LT3G against thermal strain.

- Material Decisions: The election of materials noted for superior thermal diffusion augments the heat diffusion process.

3. Appraisal Processes:

- Prototype Analysis: Embarking on initial construction and analysis of circuit prototypes is instrumental in validating performance metrics and illuminating areas for refinements.

- Simulation Utility: The enlistment of simulation apparatuses is invaluable in projecting circuit behaviors and honing design precision.

The integration of MMBT5551LT3G, informed by these elucidations, nurtures a synthesis of operational excellence, efficiency, and dependability.

MMBT5551LT3G FAQ

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6. What is the process for return or replacement of MMBT5551LT3G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MMBT5551LT3G we delivered, we will accept the replacement or return of the MMBT5551LT3G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBT5551LT3G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations