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Name: MMBT2222AWT1G
Brand: ON Semiconductor
SKU: MMBT2222AWT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor MMBT2222AWT1G

Part No.:: MMBT2222AWT1G

Manufacturer:: ON Semiconductor

Package:: SC-70, SOT-323

Datasheet:: MMBT2222AWT1G.pdf

Description:: TRANS NPN 40V 0.6A SC70-3

In Stock:: 2717

Quantity:: Add To Cart

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MMBT2222AWT1G Specifications

Packaging:
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
TransistorType:
NPN
Current-Collector(Ic)(Max):
600 mA
Voltage-CollectorEmitterBreakdown(Max):
40 V
VceSaturation(Max)@IbIc:
1V @ 50mA, 500mA
Current-CollectorCutoff(Max):
-
DCCurrentGain(hFE)(Min)@IcVce:
100 @ 150mA, 10V
Power-Max:
150 mW
Frequency-Transition:
300MHz
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MMBT2222AWT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MMBT2222AWT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MMBT2222AWT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MMBT2222AWT1G information

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MMBT2222AWT1G Typical application Circuitry

MMBT2222AWT1G

An NPN bipolar junction transistor (BJT) type that is frequently utilized in a variety of electronic applications is the MMBT2222AWT1G. Below is a discussion of its features, application situations, parameter characteristics, thorough circuit design example, and circuit design considerations:

1. Functionality: The MMBT2222AWT1G is primarily used for switching and amplification purposes. It's an NPN transistor, meaning it's turned on or off by applying a positive current to its base terminal.

2. Application Scenarios: This transistor can be found in applications such as signal amplification, switching circuits, and as a component in more complex devices like microcontrollers or sensors.

3. Parameter Characteristics: Some key features of the MMBT2222AWT1G include a collector-emitter voltage of around 40V, a collector current of up to 600mA, and a power dissipation of 300mW. It also has a high current gain (hFE), typically around 100-300, which makes it efficient for amplification purposes.

Example of Circuit Design:

- Transistor Biasing: The MMBT2222AWT1G must be properly biased in order to use it in a basic switching circuit. Attach Pin 1 (the emitter) to the ground.

- Calculation of Base Resistor: The transistor needs a base current in order to turn it on. To limit the current, connect a resistor to the base (Pin 2). By applying Ohm's Law and taking into account the necessary base current for the intended collector current, the value of this resistor (Rb) can be determined.

- Load Connection: Attach the load to the collector (Pin 3), such as an LED and a current-limiting resistor. The power supply voltage should be connected to the other end of the load.

- Control Signal: Apply the control signal (like from a microcontroller) to the base resistor. When the signal is high, the MMBT2222AWT1G will conduct, allowing current to flow through the collector to the emitter, thus turning on the load.

Design Considerations:

- Power Dissipation: Make sure the MMBT2222AWT1G's power dissipation stays within its 300mW maximum limit. This entails figuring out the power across the base-emitter and collector-emitter junctions.

- Current Ratings: The MMBT2222AWT1G maximum rating of 600mA should not be exceeded by the collector current. In applications requiring high current, this is very crucial.

- Thermal Considerations: If the transistor is expected to dissipate significant power, appropriate heat sinking or thermal management techniques should be employed.

- Signal Characteristics: The input signal characteristics (amplitude, frequency, etc.) must be compatible with the switching characteristics of the MMBT2222AWT1G.

- Circuit Protection: Implementing protection elements like flyback diodes for inductive loads can be crucial to prevent damage to the MMBT2222AWT1G.

In designing circuits with the MMBT2222AWT1G, understanding its electrical parameters and ensuring that they align with the requirements of the specific application is key to successful implementation.

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6. What is the process for return or replacement of MMBT2222AWT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MMBT2222AWT1G we delivered, we will accept the replacement or return of the MMBT2222AWT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBT2222AWT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations