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Name: MMBT2222ALT1G
Brand: ON Semiconductor
SKU: MMBT2222ALT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor MMBT2222ALT1G

Part No.:: MMBT2222ALT1G

Manufacturer:: ON Semiconductor

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT2222ALT1G.pdf

Description:: TRANS NPN 40V 0.6A SOT23-3

In Stock:: 2569

Quantity:: Add To Cart

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MMBT2222ALT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
Automotive, AEC-Q101
ProductStatus:
Active
TransistorType:
NPN
Current-Collector(Ic)(Max):
600 mA
Voltage-CollectorEmitterBreakdown(Max):
40 V
VceSaturation(Max)@IbIc:
1V @ 50mA, 500mA
Current-CollectorCutoff(Max):
10nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce:
100 @ 150mA, 10V
Power-Max:
225 mW
Frequency-Transition:
300MHz
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MMBT2222ALT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MMBT2222ALT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MMBT2222ALT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MMBT2222ALT1G information

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MMBT2222ALT1G Typical application Circuitry

MMBT2222ALT1G

The MMBT2222ALT1G is distinguished as an NPN bipolar junction transistor, characterized by its adaptability, optimal performance, and suitability for a spectrum of electronic configurations.

Applications: This transistor is integral in diverse applications, with its use particularly pronounced in signal amplification and switching operations due to its efficient performance metrics and compact design.

Parameter Specifications: With a collector current rated at 600mA and a collector-emitter voltage of 40V, the MMBT2222ALT1G is constructed to facilitate high current and voltage operations, affirming its utility in varied operational settings.

Implementation Scenario: Signal Amplifier

1. Base Connectivity:

- Linkage: The base is identified with Pin 2.

- Execution: In signal amplification configurations, the base is connected to the input signal source. A resistor is often installed in series to regulate the base current, ensuring that it stays within the transistor's operational parameters.

2. Collector Connection:

- Identification: Pin 3 is the collector's designated connector.

- Implementation: The collector is linked to the power supply. It is essential to consider the load's nature and ratings, as this connection plays a pivotal role in determining the circuit's amplification characteristics.

3. Emitter Establishment:

- Localization: Pin 1 is earmarked for the emitter.

- Integration: The emitter is grounded, offering a universal reference point for the operational and control signals.

4. Feedback Incorporation:

- Localization: Established between the output and input segments.

- Integration: Utilize resistors and capacitors to furnish feedback, stabilizing the gain and enhancing the circuit's linearity.

Key Design Considerations for MMBT2222ALT1G

1. Operational Biasing:

- Context: Biasing determines the MMBT2222ALT1G's operational mode.

- Significance: Ensuring appropriate biasing is paramount, as it influences the transistor's performance metrics, including amplification and switching speeds.

2. Thermal Management:

- Context: The inherent heat generation.

- Significance: Instituting effective heat dissipation mechanisms is fundamental to uphold operational integrity and enhance the transistor's lifespan.

3. Component Interaction:

- Context: The synergy between the MMBT2222ALT1G and adjacent components.

- Significance: The selection and arrangement of surrounding components should be meticulously executed to optimize operational efficiency and reliability.

In the orchestration of signal amplification circuits leveraging the MMBT2222ALT1G, the intricate balance among biasing, thermal management, and component interaction is indispensable. The holistic attention to these aspects ensures that the transistor delivers its acclaimed performance metrics, corroborating its esteemed standing in electronic applications where precision, efficiency, and reliability are prioritized.

MMBT2222ALT1G FAQ

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3. Are the MMBT2222ALT1G price and inventory displayed accurate?

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6. What is the process for return or replacement of MMBT2222ALT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MMBT2222ALT1G we delivered, we will accept the replacement or return of the MMBT2222ALT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBT2222ALT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations